FMM5802X Fujitsu Quantum Devices Limited, FMM5802X Datasheet

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FMM5802X

Manufacturer Part Number
FMM5802X
Description
27.5-31.5 GHz Power Amplifier MMIC
Manufacturer
Fujitsu Quantum Devices Limited
Datasheet
1.FMM5802X.pdf (4 pages)
Note: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
Edition 1.3
June 1999
FEATURES
• High Output Power: P 1dB = 25.5dBm (Typ.)
• High Gain: G 1dB = 9dB (Typ.)
• High PAE: η add = 20% (Typ.)
•
• Impedance Matched Zin/Zout = 50Ω
•
DESCRIPTION
The FMM5802X is a high-gain, wide band 2-stage
MMIC amplifier designed for operation in the 27.5-31.5 GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems.This device is well suited
for point-to-point, point-to-multi-point(LMDS), and satellite
communication system applications.
Frequency Range
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Input Return Loss
Output Return Loss
Operating Backside Temperature
Drain Voltage
Gate Voltage
Input Power
Storage Temperature
Channel Temperature
Wide Frequency Band: 27.5-31.5 GHz
0.25µm PHEMT Technology
1. The drain-source operating voltage (V DD ) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 1.5 and -0.12 mA respectively.
3. This product should be hermetically packaged
Item
Item
Symbol
Symbol
η add
G
P
I ddrf
RLo
RLi
V GG
V DD
T stg
1dB
T op
1dB
T ch
P in
f
V DD = 6V
f = 27.5 ~ 31.5 GHz
I DD = 220mA (Typ.)
Z S = Z L = 50Ω
1
Conditions
Condition
27.5-31.5GHz Power Amplifier MMIC
Min.
24.0
7
-
-
-
-
-65 to +175
-40 to +95
27.5-31.5
Rating
Limits
Typ.
FMM5802X
25.5
280
-3.0
175
-12
20
10
27
-8
9
G.C.P.: Gain Compression Point
Max.
380
-
-
-
-
-
dBm
dBm
Unit
Unit
GHz
mA
°C
dB
dB
dB
°C
°C
%
V
V

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FMM5802X Summary of contents

Page 1

... Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology • DESCRIPTION The FMM5802X is a high-gain, wide band 2-stage MMIC amplifier designed for operation in the 27.5-31.5 GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems.This device is well suited for point-to-point, point-to-multi-point(LMDS), and satellite communication system applications ...

Page 2

... FMM5802X 27.5-31.5GHz Power Amplifier MMIC P1dB & G1dB vs. VDD 27 IDD = 220mA 26 P1dB G1dB VDD ( VDD = 6V, IDD = 220mA ASSEMBLY DRAWING VGG VDD 0.15µF 0.15µF 220pF 220pF RF in 50Ω line on Alumina ...

Page 3

... FMM5802X S22 MAG ANG .982 -77.7 .880 -123.0 .585 -151.8 .853 -135.9 .948 -154.8 .960 -167.9 .939 -178.8 .875 172.7 .849 169.3 .881 162.3 .886 151 ...

Page 4

... FMM5802X 27.5-31.5GHz Power Amplifier MMIC 0 1410 1325 580 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive ...

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