2SD2170 Rohm, 2SD2170 Datasheet
2SD2170
Manufacturer Part Number
2SD2170
Description
Medium Power Transistor(Motor/ Relay drive) (90 / 2A)
Manufacturer
Rohm
Datasheet
1.2SD2170.pdf
(1 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Part Number:
2SD2170
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
2SD2170 T100
Manufacturer:
ROHM
Quantity:
2 232
Company:
Part Number:
2SD2170-T100
Manufacturer:
PHI
Quantity:
136
Part Number:
2SD2170-T100
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Part Number:
2SD2170T100
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Medium Power Transistor
(Motor, Relay drive) (90 , 2A)
2SD2170
!Features
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
"L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
! ! ! ! Absolute maximum ratings (Ta=25°C)
!Packaging specifications and h
! ! ! ! Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
*
*
Basic ordering unit (pieces)
1 Single pulse Pw = 10ms , Duty = 1 / 2
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
1 Measured using pulse current.
Package
Marking
Parameter
Code
Type
Parameter
h
FE
2SD2170
1k~10k
MPT3
T100
1000
*
Symbol
DM
V
V
V
2 Transition frequency of the device.
Tstg
P
Symbol
Tj
CBO
CES
EBO
I
V
BV
BV
C
C
I
Cob
I
CE(sat)
CBO
EBO
h
f
CBO
CEO
T
FE
−55~+150
FE
1000
Min.
Limits
80
80
150
-
-
-
-
-
90
90
6
2
3
2
+20
−10
+20
−10
Typ.
80
25
-
-
-
-
-
-
10000
A (Pulse)
Max.
110
110
A (DC)
1.5
10
3
-
-
Unit
°C
°C
W
V
V
V
MHz
Unit
mA
µA
pF
*
*
V
V
V
-
1
2
I
I
V
V
I
V
V
V
C
C
C
CB
EB
CE
CE
CB
/I
= 50µA
= 1mA
B
= 5V
= 70V
= 2V , I
= 5V , I
= 10V , I
= 1A/1mA
! ! ! ! External dimensions (Units : mm)
ROHM : MPT3
EIAJ : SC-62
C
E
+20
−10
E
= 1A
= −0.1A , f = 30MHz
= 0A , f = 1MHz
Conditions
!Circuit diagram
1.0
E
B
C
*
*
*
: Emitter
: Base
: Collector
1
1
2
( 1 )
( 2 )
( 3 )
B
4.0
2.5
R
0.5
1
R
R
1
2
R
3.5kΩ
300 Ω
2
C
E
2SD2170
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
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