LMBT4403LT1G Leshan Radio Company, LMBT4403LT1G Datasheet

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LMBT4403LT1G

Manufacturer Part Number
LMBT4403LT1G
Description
General Purpose Transistors Pnp Silicon Lmbt4403lt1g
Manufacturer
Leshan Radio Company
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LMBT4403LT1G
Manufacturer:
LRC/乐山
Quantity:
20 000
Company:
Part Number:
LMBT4403LT1G
Quantity:
120 000
ORDERING INFORMATION
3. Pulse Test: Pulse Width <300 s; Duty Cycle <2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
LMBT4403LT1G
LMBT4403LT3G
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation FR –5 Board (1)
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate (2) T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
LMBT4403LT1G = 2T
General Purpose Transistors
PNP Silicon
T
Derate above 25°C
Device
We declare that the material of product
Collector–Emitter Breakdown Voltage (3)
(I
Collector–Base Breakdown Voltage
(I
Emitter–Base Breakdown Voltage
(I
Base Cutoff Current
(V
Collector Cutoff Current
(V
A
=25 °C
C
C
E
CE
CE
= –1.0 mAdc, I
= –0.1mAdc, I
= –0.1mAdc, I
= –35 Vdc, V
= –35 Vdc, V
Rating
Characteristic
E
C
Marking
B
EB
EB
= 0)
= 0)
= 0)
Characteristic
= –0.4 Vdc)
= –0.4 Vdc)
2T
2T
A
= 25°C
10000/Tape & Reel
3000/Tape & Reel
(T
A
= 2 C unless otherwise noted)
Shipping
compliance with RoHS requirements.
Symbol
T
Symbol
R
R
V
V
V
J
P
P
, T
I
CEO
CBO
EBO
C
D
JA
D
JA
stg
–55 to +150
Value
– 600
– 5.0
– 40
– 40
Max
225
556
300
417
1.8
2.4
V
Symbol
V
V
I
I
(BR)CEO
(BR)CBO
(BR)EBO
BEV
CEX
mAdc
Unit
Vdc
Vdc
Vdc
LESHAN RADIO COMPANY, LTD.
mW/°C
mW/°C
°C/W
°C/W
Unit
mW
mW
°C
– 5.0
– 40
Min
– 40
LMBT4403LT1G
– 0.1
– 0.1
Max
SOT– 23 (TO–236AB)
1
BASE
1
Vdc
Vdc
Vdc
Unit
Adc
Adc
2
3
3
COLLECTOR
2
EMITTER
1/6

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LMBT4403LT1G Summary of contents

Page 1

... Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate ( 25°C A Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING LMBT4403LT1G = 2T ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage ( –1.0 mAdc Collector– ...

Page 2

... 200 + 14V < –16 V Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope LMBT4403LT1G Min Max 30 –– 60 –– 100 –– 100 300 20 –– –– – 0.4 –– ...

Page 3

... ’ – 1 100 200 I , COLLECTOR CURRENT (mA) C Figure 7. Storage Time LMBT4403LT1G 100 200 I , COLLECTOR CURRENT (mA) C Figure 4. Charge Data V = 30V ...

Page 4

... MMBT4403LT1 UNIT 1 1 MMBT4403LT1 UNIT 2 0.5 0.2 0.1 0.1 2.0 3.0 7.0 5.0 10 500 100 5.0 2.0 1.0 2.0 3.0 7.0 5.0 10 0.1 LMBT4403LT1G f = 1.0 kHz 100 A 500 A 1.0 mA 200 500 10k 20k R , SOURCE RESISTANCE ( ) S Figure 9. Source Resistance Effects MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3 COLLECTOR CURRENT (mAdc) C Figure 11. Input Impedance ...

Page 5

... I , COLLECTOR CURRENT (mA) C Figure 14. DC Current Gain 100mA 0.2 0.3 0.5 0.7 1 BASE CURRENT (mA) B Figure 15. Collector Saturation Region + 0.5 0 – 0.5 –1.0 –1.5 –2.0 – 2.5 50 100 200 500 0.1 0.2 Figure 17. Temperature Coefficients LMBT4403LT1G –55° 100 20 300 500mA 2.0 3.0 5.0 7 for V VC CE(sat) for 0.5 1.0 2.0 5 ...

Page 6

... CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.1102 0.1197 B 0.0472 0.0551 C 0.0350 0.0440 D 0.0150 0.0200 G 0.0701 0.0807 H 0.0005 0.0040 J 0.0034 0.0070 K 0.0140 0.0285 L 0.0350 0.0401 J S 0.0830 0.1039 V 0.0177 0.0236 0.037 0.95 0.079 2.0 0.031 inches 0.8 mm LMBT4403LT1G MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 6/6 ...

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