VFT2080C Vishay, VFT2080C Datasheet

no-image

VFT2080C

Manufacturer Part Number
VFT2080C
Description
Dual Trench MOS Barrier Schottky Rectifier
Manufacturer
Vishay
Datasheet
www.DataSheet.co.kr
Document Number: 89260
Revision: 18-Nov-10
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
V
F
at I
T
V
J
I
I
F(AV)
FSM
RRM
F
max.
= 10 A
Dual Trench MOS Barrier Schottky Rectifier
PIN 1
PIN 3
ITO-220AB
VFT2080C
TMBS
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
R
)
A
= 25 °C unless otherwise noted)
®
PIN 2
1
2
3
2 x 10 A
Ultra Low V
150 °C
0.60 V
100 A
80 V
per device
per diode
New Product
F
= 0.52 V at I
SYMBOL
T
dV/dt
J
V
I
I
V
, T
F(AV)
FSM
RRM
AC
STG
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
• Compliant to RoHS Directive 2002/95/EC and in
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
JESD 22-B106
accordance to WEEE 2002/96/EC
F
DiodesEurope@vishay.com
= 5 A
Vishay General Semiconductor
- 55 to + 150
VFT2080C
10 000
1500
100
80
20
10
VFT2080C
www.vishay.com
UNIT
V/μs
°C
A
A
V
V
1
Datasheet pdf - http://www.DataSheet4U.net/

Related parts for VFT2080C

VFT2080C Summary of contents

Page 1

... Mounting Torque: 10 in-lbs maximum = 25 °C unless otherwise noted) A SYMBOL V RRM per device I F(AV) per diode I FSM ) dV/ STG VFT2080C Vishay General Semiconductor = VFT2080C 100 10 000 1500 - 150 www.vishay.com DiodesEurope@vishay.com UNIT V/μs V °C 1 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 2

... SYMBOL per diode R θJC per device UNIT WEIGHT (g) PACKAGE CODE 1.73 100 125 150 175 SYMBOL TYP. MAX. 0.57 - 0.67 0.81 ( 0.52 - 0.60 0.70 20 600 ( VFT2080C 6.0 5.0 BASE QUANTITY DELIVERY MODE 4W 50/tube ...

Page 3

... PIN 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.057 (1.45) 0.045 (1.14) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.205 (5.21) 0.095 (2.41) 0.195 (4.95) VFT2080C Vishay General Semiconductor 10 Junction to Case 1 0.1 0.01 0 Pulse Duration (s) Fig Typical Transient Thermal Impedance 10 000 ° 1.0 MHz sig 1000 ...

Page 4

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords