1N4937GPE Vishay, 1N4937GPE Datasheet

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1N4937GPE

Manufacturer Part Number
1N4937GPE
Description
1n4933gp Thru 1n4937gp - Glass Passivated Junction Fast Switching Rectifier
Manufacturer
Vishay
Datasheet
Document Number: 88509
Revision: 08-Apr-08
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature
range
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
by Patent No. 3,930,306
T
V
I
J
I
F(AV)
FSM
RRM
V
t
I
max.
Glass Passivated Junction Fast Switching Rectifier
rr
R
F
DO-204AL (DO-41)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
A
= 75 °C
A
= 25 °C unless otherwise noted)
50 V to 600 V
200 ns
175 °C
5.0 µA
1.0 A
1.2 V
30 A
SYMBOL
T
V
J
V
I
I
V
F(AV)
, T
FSM
RRM
RMS
DC
STG
1N4933GP
50
35
50
FEATURES
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
• Superectifier structure for high reliability
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
1N4934GP
condition
and WEEE 2002/96/EC
100
100
70
1N4933GP thru 1N4937GP
Vishay General Semiconductor
- 65 to + 175
1N4935GP
200
145
200
1.0
30
1N4936GP
400
280
400
1N4937GP
600
420
600
www.vishay.com
UNIT
°C
V
V
V
A
A
1

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1N4937GPE Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 88509 For technical questions within your region, please contact one of the following: Revision: 08-Apr-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • ...

Page 2

... Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 1.0 A forward voltage Maximum DC reverse T current at rated DC T blocking voltage Maximum reverse recovery time Typical junction 4 MHz capacitance THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted ...

Page 3

... Figure 4. Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.026 (0.66) Note: Lead diameter is for suffix “E” part numbers 0.023 (0.58) Document Number: 88509 For technical questions within your region, please contact one of the following: Revision: 08-Apr-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 100 10 1.6 1.8 2.0 100 ° ...

Page 4

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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