1N4937G-TB WonTop Electronics Co., Ltd, 1N4937G-TB Datasheet

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1N4937G-TB

Manufacturer Part Number
1N4937G-TB
Description
1.0a Glass Passivated Fast Recovery Diode
Manufacturer
WonTop Electronics Co., Ltd
Datasheet
Features
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Mechanical Data
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Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
1N4933G – 1N4937G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
POWER SEMICONDUCTORS
Characteristic
WTE
@T
@T
@T
@I
A
A
F
= 100°C
A
= 25°C
= 1.0A
= 75°C
1.0A GLASS PASSIVATED FAST RECOVERY DIODE
1N4933G – 1N4937G
Symbol
V
V
V
T
R(RMS)
I
V
I
FSM
RWM
V
RRM
I
RM
C
STG
t
T
O
FM
rr
R
j
j
1 of 4
1N4933G
50
35
@T
1N4934G
A
=25°C unless otherwise specified
100
70
A
Dim
-65 to +150
-65 to +150
1N4935G
A
B
C
D
All Dimensions in mm
200
140
100
200
1.0
1.2
5.0
30
15
B
DO-41
25.4
4.06
0.71
2.00
Min
1N4936G
400
280
© 2006 Won-Top Electronics
D
0.864
Max
5.21
2.72
1N4937G
A
600
420
Unit
µA
nS
pF
°C
°C
Pb
V
V
A
A
V
C

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1N4937G-TB Summary of contents

Page 1

... Storage Temperature Range Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 1N4933G – 1N4937G 1N4933G – 1N4937G 1.0A GLASS PASSIVATED FAST RECOVERY DIODE Symbol 1N4933G ...

Page 2

... Fig. 3 Peak Forward Surge Current 50 NI (Non-inductive) Device Under Test (+) 50V DC Approx (-) 1.0 NI Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . 1N4933G – 1N4937G 125 150 175 200 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC Method) 10 100 10 NI (-) Pulse Generator (Note 2) ...

Page 3

... TAPE & BOX 255 150 BULK 198 Note: 1. Paper reel, white or gray color. Core material: plastic or metal. 2. Components are packed in accordance with EIA standard RS-296-E. 1N4933G – 1N4937G TAPING SPECIFICATIONS = Polarity Band 1.2mm MAX = Device Number = Manufacturer’ ...

Page 4

... Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer ...

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