MMBT2907Q SeCoS Halbleitertechnologie GmbH, MMBT2907Q Datasheet
MMBT2907Q
Manufacturer Part Number
MMBT2907Q
Description
Pnp Silicon General Purpose Transistor
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
1.MMBT2907Q.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT2907Q
Manufacturer:
SeCoS
Quantity:
772
01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com
Electrical Characteristics( Tamb=25
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
Delay time
Rise time
Storage time
Fall time
* Features
Collector-base voltage
Operating & Storage junction Temperature
Power dissipation
Collector current
Parameter
Elektronische Bauelemente
P
I
V
T
CM
j
CM
(BR)CBO
, T
stg
: 1.25 W (Temp.= 25 C)
: -0.6 A
: -55 C~ +150 C
: -60 V
O
O
O
V
V
V
V
V
V
V
C
C
Symbol
t
t
t
t
(BR)CBO
(BR)CEO
(BR)EBO
CE
CE
BE
BE
ob
ib
d
r
S
f
I
I
h
h
h
h
h
f
CBO
EBO
O
T
FE(1)
FE(2)
FE(3)
FE(4)
FE(5)
(sat)1
(sat)2
(sat)1
(sat)2
C unless otherwise specified)
RoHS Compliant Product
1
2
SOT-89
1.B AS E
2.C OLLE C T OR
3.E MIT T E R
3
Ic= -10
Ic= -10mA， I
I
V
V
V
V
V
V
V
I
I
I
I
V
f=
V
f=
V
f=
V
I
I
I
E
C
C
C
C
C
C
B1
CB
EB
CE
CE
CE
CE
CE
CE
CB
EB
CC
=-10
=-150 mA, I
=-500 mA, I
=-150 mA, I
=-500 mA, I
=-150mA,I
=-150mA
Test
100MHz
1MHz
1MHz
= I
= -3V ,
=-2V, I
=-50 V , I
=-1V, I
=-1V, I
=-1V, I
=-2V, I
=-2V, I
=-20V, I
=-10V, I
=-30V,
B2
μ
μ
= -15mA
A， I
A， I
conditions
C
C
C
C
C
C
B1
= 0
= -0.1mA
= -1mA
=-10mA
= -150mA
=-500mA
C
E
B
B
B
B
I
= -50mA
= 0
=-15mA
C
B
C
E
=-15mA
=- 50mA
=-15mA
= -50mA
=0
=0
=0
=0
E
=0
General Purpose Transistor
MMBT2907Q
３
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Any changing of specification will not be informed individual
PNP Silicon
e
100
100
100
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
0.900
MIN
75
50
200
-60
-60
D1
D
e1
Dimensions In Millimeters
-5
1.500TYP
b1
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
1.100
b
-0. 01
-0. 01
MAX
300
-0.4
-1.3
-1.6
-2.6
300
30
12
30
65
8
Min
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
0.114
0.035
C
Dimensions In Inches
0.060TYP
A
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
0.122
0.043
UNIT
MHz
μ
μ
nS
nS
nS
nS
pF
pF
V
V
V
V
V
V
V
A
A
Page 1 of 3
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MMBT2907Q Summary of contents
Page 1
... 1MHz =-30V =-150mA =-150mA -15mA MMBT2907Q PNP Silicon General Purpose Transistor Dimensions In Millimeters Symbol ３ Min Max Min A 1.400 1.600 0.055 b 0.320 0.520 0.013 b1 0.360 0.560 0.014 0.350 ...
Page 2
... 200 100 2.0 V 7.0 5.0 –200 –300 –500 –5.0 –7.0 –10 MMBT2907Q PNP Silicon General Purpose Transistor 25 C – –20 –30 –50 –70 –100 –200 –300 –500 mA –3.0 –20 –30 –2.0 –5.0 –7.0 – –30 V ...
Page 3
... Vdc 5 100 C cb –2.0 –3.0 –5.0 –10 –20 –30 +0.5 –0.5 V BE(on –10 V –1.0 –1.5 –2.0 –2.5 –50 –100 –200 –500 MMBT2907Q PNP Silicon General Purpose Transistor 1.0 kHz 8.0 6 –50 A –100 A –500 A 4.0 –1 100 200 500 1 ...