MMBT2907AL-AL3-R Unisonic Technologies, MMBT2907AL-AL3-R Datasheet - Page 2

• Manufacturer Part Number: MMBT2907AL-AL3-R
• Description: Pnp Planar Transistor
• Manufacturer: Unisonic Technologies

MMBT2907A
Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be
Thermal Resistance Junction-Case
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain – Bandwidth Product
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
THERMAL CHARACTERISTICS
Total Device Dissipation
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle≤2.0%
Note: Device mounted on FR-4 PCB 1.6” x 1.6” x 0.06.”
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Operating Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
ABSOLUTE MAXIMUM RATING
THERMAL DATA
cycle operations.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
impaired.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
PARAMETER
SYMBOL
V
V
BV
BV
BV
Cobo
Cibo
CE(SAT)
BE(SAT)
I
I
h
CBO
t
CEX
P
t
td
I
ON
ts
f
tr
off
tf
FE
CEO
CBO
EBO
B
T
D
(NOET 1) (Ta=25℃ unless otherwise specified)
SOT-23
SOT-323
(Ta=25℃ unless otherwise specified)
I
I
I
V
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
B1
CB
CE
CB
CB
CB
EB
CC
CC
=-10µA , I
=-10mA, I
=-10µA, I
=-0.1mA, V
=-1.0 mA, V
=-10 mA, V
=-150 mA, V
=-500 mA, V
=-150 mA, I
=-500 mA, I
=-150 mA, I
=-500 mA, I
=-50mA, V
= I
=-2V, I
=-30V, V
=-30V, V
=-50V, I
=-50V, I
=-10V, I
=30V, I
=6V, I
B2
=-15mA
TEST CONDITIONS
C
C
=-150mA,
C
E
=0, f=100kHz
B
C
E
E
E
=0
=-150mA, I
SYMBOL
SYMBOL
EB
BE
=0
=0, T
CE
=0
=0
=0, f=100kHz
CE
CE
T
B
B
B
B
CE
CE
CE
=-0.5V
=-0.5V
=-15mA
=-50mA
=-15mA*
=-50mA
V
V
V
J,
=-20V, f=100MHz
=-10V
=-10V
θ
=-10V
CEO
CBO
EBO
I
T
=-10V*
=-10V*
JA
C
STG
A
=150℃
B1
PNP PLANAR TRANSISTOR
=-15mA
SOT-23
SOT-323
-55 ~ +150
RATINGS
RATINGS
-800
357
455
-60
-60
-5
MIN
100
100
100
200
-60
-60
75
50
-5
TYP
-0.02
MAX UNIT
300
-0.4
-1.6
-1.3
-2.6
100
350
275
-50
-50
-20
30
45
10
40
80
30
8
QW-R220-001,B
UNIT
UNIT
°C/W
°C/W
mA
℃
2 of 6
V
V
V
MHz
mW
mW
nA
nA
µA
µA
pF
pF
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V
V