BSM20GD60DL Eupec Power Semiconductors, BSM20GD60DL Datasheet

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BSM20GD60DL

Manufacturer Part Number
BSM20GD60DL
Description
IGBT, IGBT Power Module, VCG 600, VCE 600, IC 25 A
Manufacturer
Eupec Power Semiconductors
Datasheet
1.BSM20GD60DL.pdf (9 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM20GD60DLC
Manufacturer:
SIEMENS
Quantity:
560
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM20GD60DLC
Quantity:
50
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM20GD60DLCE3224
Manufacturer:
ARTESYN
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM20GD60DLCE3224
Quantity:
80
BSM 20 GD 60 DL
IGBT Power Module
Preliminary data
• 600V NPT Technology
• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 20 GD 60 DL
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 60 °C
= 25 °C
= 60 °C
= 25 °C
= 20 k
p
= 1 ms
V
600V
CE
I
25A
C
1
Package
ECONOPACK 2
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
Q67050-A0003-A67
+ 150
± 20
2500
600
600
F
25
20
50
40
80
16
11
1.6
1.8
Oct-23-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM20GD60DL Summary of contents

Page 1

BSM IGBT Power Module Preliminary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM Maximum ...

Page 2

BSM Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 0 CE, C Collector-emitter saturation voltage °C ...

Page 3

BSM Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 300 Gon Rise time V = 300 V, ...

Page 4

BSM Power dissipation tot C parameter: T 150 ° tot Collector current ...

Page 5

BSM Typ. output characteristics parameter 250 µ ° 17V 15V I 13V C 30 11V ...

Page 6

BSM Typ. gate charge Gate parameter puls 100 ...

Page 7

BSM Typ. switching time inductive load , T = 125° par 300 ± ...

Page 8

BSM Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter =125° 0.0 0.5 1.0 1.5 Transient ...

Page 9

BSM Package Outlines Dimensions in mm Weight: 180 g Circuit Diagram 9 Oct-23-1997 ...

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