CMPA2060025D Cree, Inc., CMPA2060025D Datasheet

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CMPA2060025D

Manufacturer Part Number
CMPA2060025D
Description
Cree, Cmpa2060025d 25w, 2.0-6.0ghz, Gan Hemt Mmic Cree Wireless Gan-on-sic Mmic
Manufacturer
Cree, Inc.
Datasheet

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Part Number:
CMPA2060025D
Manufacturer:
CREE
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Part Number:
CMPA2060025D
Manufacturer:
CREE/科锐
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CMPA2060025D
25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMP2060025D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively
matched amplifier design approach enabling very wide bandwidths to
be achieved.
Features
Typical Performance Over 2.0-6.0 GHz
Note
Data with 50Ω output load. Output transformer can improve performance.
Parameter
Small Signal Gain
Saturated Output Power, P
Power Gain @ P
PAE @ P
1
: P
SAT
21 dB Small Signal Gain
23 W Typical P
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
Size 0.142 x 0.144 x 0.004 inches
is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA. Typical
OUT
44 dBm
OUT
= 44 dBm
SAT
SAT
1
PRELIMINARY
2.0 GHz
Subject to change without notice.
31
29
23
42
www.cree.com/wireless
Applications
3.0 GHz
(T
33
26
23
40
C
= 25˚C)
Ultra Broadband Drivers
Fiber Drivers
Test Instrumentation
EMC Amplifier Drivers
4.0 GHz
27
38
18
50
5.0 GHz
23
27
16
28
6.0 GHz
27
45
18
38
Units
dB
dB
W
%
1

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CMPA2060025D Summary of contents

Page 1

... CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors ...

Page 2

... Copyright © 2010-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA2060025D Rev 0.2, Preliminary Symbol V DSS ...

Page 3

... Copyright © 2010-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA2060025D Rev 0.2, Preliminary Description ~ 2 ...

Page 4

... Copyright © 2010-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA2060025D Rev 0.2, Preliminary C2 C4 C10 ...

Page 5

... Typical Performance of the CMPA2060025D Small Signal Gain vs Frequency V =28V, I =1.2A, Unmatched Load -20 -40 1.0 2.0 3.0 4.0 Frequency (GHz) Output Power & Power Added Efficiency vs Frequency V =28V, I =1.2A, Unmatched Load Pout (dBm Pout 15 PAE 2.0 3.0 4.0 Frequency (GHz) Copyright © 2010-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 6

... Copyright © 2010-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA2060025D Rev 0.2, Preliminary Package Power Output (W) Upper Frequency (GHz) ...

Page 7

... Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA2060025D Rev 0.2, Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...

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