TC4432 TelCom Semiconductor, TC4432 Datasheet - Page 2

• Manufacturer Part Number: TC4432
• Description: (TC4431 / TC4432) 1.5A HIGH-SPEED 30V MOSFET DRIVERS
• Manufacturer: TelCom Semiconductor

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TC4431
TC4431
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ............................................................36V
Input Voltage (Note 1) ........................ V
Maximum Chip Temperature ................................. +150 C
Storage Temperature Range ................ – 65 C to +150 C
Lead Temperature (Soldering, 10 sec) ................. +300 C
Package Thermal Resistance
ELECTRICAL CHARACTERISTICS:
Symbol
Input
V
V
I
Output
V
V
R
I
I
Switching Time (Note 2)
t
t
t
t
Power Supply
I
V
V
4-258
IN
PK
REV
R
F
D1
D2
S
IH
IL
OH
OL
S
DO
O
CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R
J-A
J-C
J-A
J-C
J-A
J-C
................................................... 125 C/W
..................................................... 42 C/W
................................................... 250 C/W
..................................................... 75 C/W
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current (Note 1)
High Output Voltage
Low Output Voltage
Output Resistance (V
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Start-up Threshold
Drop-out Threshold
Parameter
................................................ 150 C/W
.................................................. 50 C/W
OL
)
DD
+ 0.3V to GND
T
A
= +25 C with 5.0
Test Conditions
0V
I
V
Source: V
Sink: V
Duty Cycle
t
Figure 1
Figure 1
Figure 1
Figure 1
V
V
(Note 3)
OUT
DD
IN
IN
300 sec
= 3V
= 0V
= 30V, I
= 100mA
V
IN
DD
1.5A HIGH-SPEED 30V MOSFET DRIVERS
DD
= 30V
V
O
DD
Operating Temperature Range
Package Power Dissipation (T
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
= 30V
2%
= 10mA
(16V MAX)
C Version ............................................... 0 C to +70 C
E Version ........................................... - 40 C to +85 C
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ............................................................... 470mW
V
DD
30V, unless otherwise specified.
TELCOM SEMICONDUCTOR, INC.
V
DD
Min
2.4
0.3
—
–1
—
—
—
—
—
—
—
—
—
—
—
7
– 1.0
A
V
70 C )
DD
Typ
3.0
1.5
2.5
0.3
8.4
7.7
25
33
62
78
—
—
—
—
—
7
– 0.8
0.025
Max
0.8
0.4
10
40
50
80
90
10
—
—
—
—
—
—
1
4
Unit
V
V
V
V
A
A
nsec
nsec
nsec
nsec
mA
V
V
A