IRF1010ESPbF International Rectifier, IRF1010ESPbF Datasheet

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IRF1010ESPbF

Manufacturer Part Number
IRF1010ESPbF
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet
1.IRF1010ESPBF.pdf (10 pages)
l
l
l
l
l
l
l
Description
Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low-
profile applications.
www.irf.com
I
I
I
P
V
I
E
dv/dt
T
T
R
R
D
D
DM
AR
2
J
STG
D
GS
AR
θJC
θJA
Pak is suitable for high current applications because of its
@ T
@ T
Advanced Process Technology
Surface Mount (IRF1010ES)
Low-profile through-hole (IRF1010EL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
2
C
C
C
Pak is a surface mount power package capable of
= 25°C
= 100°C
= 25°C
®
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Power MOSFETs from International
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
IRF1010ES
S
D
IRF1010ESPbF
IRF1010ELPbF
D
Max.
84
330
200
± 20
1.4
4.0
59
50
17
2
Pak
‡
®
R
Power MOSFET
DS(on)
Max.
V
0.75
I
40
D
DSS
= 84A‡
IRF1010EL
TO-262
PD - 95444
= 60V
= 12mΩ
Units
Units
°C/W
W/°C
V/ns
mJ
°C
W
A
V
A
1

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IRF1010ESPbF Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Case θJC R Junction-to-Ambient (PCB mount)** θJA www.irf.com G @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ 95444 IRF1010ESPbF IRF1010ELPbF ® HEXFET Power MOSFET 60V DSS R = 12mΩ DS(on 84A‡ Pak TO-262 IRF1010ES IRF1010EL Max ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

0V MHZ C iss = rss = C gd 5000 C oss = Ciss 4000 3000 Coss 2000 Crss ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 800 15V DRIVER 600 + 400 ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" Note: "P" sembly line pos ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL 3103L LOT CODE 1789 AS S EMB LED ON WW 19, 1997 EMB LY LINE "C" ...

Page 10

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

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