IRF1010ES International Rectifier, IRF1010ES Datasheet
IRF1010ES
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IRF1010ES Summary of contents
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... Advanced Process Technology l l Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l l Fast Switching Fully Avalanche Rated l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ...
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... IRF1010ES/IRF1010EL Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° 100 V DS 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRF1010ES/IRF1010EL 1000 TOP BOTTOM 100 ° 10 0.1 10 100 Fig 2. Typical Output Characteristics 3 2.5 2.0 ° 175 C J 1.5 1.0 ...
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... IRF1010ES/IRF1010EL 6000 0V, C iss = rss = C gd 5000 C oss = Ciss 4000 3000 Coss 2000 Crss 1000 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° 0.1 0.0 0.6 1.2 V ,Source-to-Drain Voltage (V) SD Fig 7 ...
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... Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRF1010ES/IRF1010EL R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms ...
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... IRF1010ES/IRF1010EL Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 800 ...
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... Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V Fig 14. For N-channel www.irf.com IRF1010ES/IRF1010EL Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance Ground Plane ƒ Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor "D" ...
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... IRF1010ES/IRF1010EL 2 D Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP. ...
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... TO-262 Package Outline TO-262 Part Marking Information www.irf.com IRF1010ES/IRF1010EL 9 ...
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... IRF1010ES/IRF1010EL 2 D Pak Tape & Reel Information TIO . -418 . LIN SIO LIM ...