IRF1104 International Rectifier, IRF1104 Datasheet

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IRF1104

Manufacturer Part Number
IRF1104
Description
Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Manufacturer
International Rectifier
Datasheet

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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
CS
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
PRELIMINARY
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
100
Max.
1.11
± 20
400
170
350
5.0
71
60
17
®
R
IRF1104
Power MOSFET
DS(on)
Max.
I
V
0.90
–––
D
62
DSS
= 100A
TO-220AB
PD- 9.1724A
= 0.009
= 40V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
4/24/98

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IRF1104 Summary of contents

Page 1

... CS R Junction-to-Ambient JA www.irf.com PRELIMINARY HEXFET G @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– PD- 9.1724A IRF1104 ® Power MOSFET 40V DSS R = 0.009 DS(on 100A D S TO-220AB Max. Units 100 71 A 400 ...

Page 2

... IRF1104 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... PULSE WIDTH 0.1 4.0 5.0 6.0 7 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com 1000 20µs PULSE WIDTH ° 100 = 50V DS 8.0 9.0 10.0 IRF1104 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 20µs PULSE WIDTH T = 175 0 Drain-to-Source Voltage (V) DS Fig 2. Typical Output Characteristics 2 ...

Page 4

... IRF1104 5000 iss rss 4000 oss ds C iss 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 175 C ° ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V 90% 125 150 175 ° 10% V Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRF1104 D.U. 10V Pulse Width µs Duty Factor DS GS ...

Page 6

... IRF1104 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 800 1 5V 600 400 ...

Page 7

... Low Leakage Inductance Current Transformer - - dv/dt controlled by R Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = Waveform Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% Fig 14. For N-Channel HEXFETS IRF1104 + + P.W. Period * V =10V ...

Page 8

... IRF1104 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.11 3) 2.62 (.10 3) 15.24 (.60 0) 14.84 (.58 4) 14.09 (.55 5) 13.47 (. .40 (.0 55 .15 (.0 45) 2.54 (.100 & 14. 982. ...

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