IRF1404 International Rectifier, IRF1404 Datasheet - Page 2

• Manufacturer Part Number: IRF1404
• Description: Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
• Manufacturer: International Rectifier

IRF1404
Electrical Characteristics @ T

Source-Drain Ratings and Characteristics
‚
ƒ
Notes:
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
2
fs
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
Repetitive rating; pulse width limited by
(BR)DSS
I
max. junction temperature. (See fig. 11)
R
T
Starting T
SD
J
G
eff.
= 25 , I
175°C
95A, di/dt
/ T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 0.12mH
AS
= 95A. (See Figure 12)
150A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
…
†
„
C
Pulse width
as C
106
–––
–––
–––
–––
–––
–––
–––
––– 0.036 –––
––– 0.0035 0.004
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
oss
Min. Typ. Max. Units
Calculated continuous current based on maximum allowable
40
–––
–––
–––
–––
–––
–––
junction temperature. Package limitation current is 75A
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
7360 –––
1680 –––
6630 –––
1490 –––
1540 –––
while V
–––
–––
–––
–––
–––
–––
––– -200
160
140
240
–––
–––
–––
180
4.5
35
42
17
72
26
7.5
71
162†
–––
300µs; duty cycle
–––
–––
250
200
200
–––
–––
–––
–––
–––
–––
110
270
–––
4.0
1.3
20
60
DS
650
is rising from 0 to 80% V
V/°C
µA
nA
ns
nH
nC
nC
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs „
MOSFET symbol
integral reverse
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
GS
GS
GS
J
J
G
D
= 95A
= 95A
= 25°C, I
= 25°C, I
= 0.21
= 2.5
= 0V, I
= 10V, I
= 10V, I
= 25V, I
= 40V, V
= 32V, V
= 20V
= -20V
= 32V
= 10V„
= 20V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
2%.
D
S
F
„
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
GS
GS
= 95A, V
= 95A
DSS
= 250µA
= 60A
= 95A „
= 0V to 32V
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
= 150°C
= 0V
G
G
S
+L
„
D
S
D
)
S
D