IRF3710x International Rectifier, IRF3710x Datasheet
IRF3710x
Manufacturer Part Number
IRF3710x
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet
1.IRF3710X.pdf
(10 pages)
Description
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
Advanced HEXFET
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
www.irf.com
I
I
I
P
V
I
E
dv/dt
T
T
R
R
D
D
DM
AR
J
STG
D
GS
AR
θJC
θJA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
2
C
C
C
Pak is a surface mount power package capable of accommodating die
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
®
Junction-to-Case
Junction-to-Ambient
Power MOSFETs from International Rectifier utilize
Parameter
Parameter
(PCB Mounted,steady-state)**
‡
ƒ‡
GS
GS
@ 10V
@ 10V
‡
‡
G
2
Pak is
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
-55 to + 175
S
D
Max.
IRF3710S
180
200
± 20
1.3
5.8
57
40
28
20
D
2
IRF3710S
IRF3710L
Pak
®
R
Power MOSFET
V
DS(on)
Max.
0.75
40
DSS
I
D
= 57A
PD - 94201B
= 100V
= 23mΩ
IRF3710L
TO-262
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1
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