IRF530FP STMicroelectronics, IRF530FP Datasheet

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... Pulse width limited by safe operating area March 1998 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR I DS(on INTERNAL SCHEMATIC DIAGRAM = 100 IRF530FP TO-220FP Value Unit 100 V 100 0. 2000 V o ...

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... IRF530FP THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T ...

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... 4 Test Conditions =16 A di/dt = 100 150 IRF530FP Min. Typ. Max. = Min. Typ. Max Min. Typ. Max 1.5 150 0.8 10 Unit ...

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... IRF530FP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 4/5 TO-220FP MECHANICAL DATA mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 16 30.6 10.6 16.4 9.3 3 inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.098 0.108 0.017 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.204 ...

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... SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SGS-THOMSON Microelectronics GROUP OF COMPANIES . . . IRF530FP 5/5 ...