IRF6668 International Rectifier, IRF6668 Datasheet - Page 5

• Manufacturer Part Number: IRF6668
• Description: DirectFet Power MOSFET
• Manufacturer: International Rectifier

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Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 8. Typical On-Resistance vs. Gate Voltage
1000
1000
100
100
0.1
Fig12. Maximum Safe Operating Area
60
50
40
30
20
10
10
10
1
0
0
1
0.0
4
0
Tc = 25°C
Tj = 150°C
Single Pulse
V GS, Gate -to -Source Voltage (V)
0.2
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
6
T J = 150°C
T J = 25°C
T J = -40°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0.4
8
1
0.6
10
T J = 125°C
T J = 25°C
10msec
1msec
100µsec
0.8
12
10
V GS = 0V
I D = 12A
1.0
14
100
1.2
16
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 9. Typical On-Resistance vs. Drain Current
100
6.0
5.0
4.0
3.0
2.0
60
50
40
30
20
10
80
60
40
20
Fig 11. Typical Threshold Voltage vs.
0
0
-75 -50 -25
25
0
I D = 100µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
Starting T J , Junction Temperature (°C)
Junction Temperature
20
50
T J , Temperature ( °C )
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
I D , Drain Current (A)
0
75
40
25
50
100
60
I D
BOTTOM 23A
75 100 125 150
IRF6668
T J = 25°C
125
80
TOP
4.3A
7.6A
150
100
5