IRF7335D1 International Rectifier, IRF7335D1 Datasheet

no-image

IRF7335D1

Manufacturer Part Number
IRF7335D1
Description
Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE
Manufacturer
International Rectifier
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7335D1
Manufacturer:
IR
Quantity:
5 510
Part Number:
IRF7335D1
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7335D1TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7335D1TRPBF
Manufacturer:
IR
Quantity:
3 388
Part Number:
IRF7335D1TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7335D1TRPBF
Quantity:
15 993
Description
The FETKY
board space saving solution for switching regulator and power management applications. Advanced
HEXFET MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable
for a wide variety of portable electronics applications.
The SO-14 has been modified through a customized leadframe for enhanced thermal characteristics and
multiple die capability making it ideal in a variety of power applications. With these improvements multiple
devices can be used in an application with dramatically reduced board space. Internal connections enable
easier board layout design with reduced stray inductance.
Absolute Maximum Ratings
Thermal Resistance
Notes  through … are on page 12
• Co-Pack Dual N-channel HEXFET Power MOSFET
• Ideal for Synchronous Buck DC-DC
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
V
I
I
I
P
P
V
E
T
T
Symbol
R
R
D
D
DM
J
STG
DS
D
D
GS
AS
and Schottky Diode
Converters Up to 11A Peak Output
@ T
@ T
JL
JA
@T
@T
(6 sigma)
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
family of Co-Pack HEXFET MOSFETs and Schottky diodes offers the designer an innovative,
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy …
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient ƒ
D1
D1
G1
G2
S2
S2
S2
Parameter
Parameter
1
2
3
4
5
6
7
Q1
Q2
GS
GS
14
13
12
11
10
9
8
@ 10V„
@ 10V„
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
300 (1.6mm from case )
Typ.
R
Q
Q
V
SD
DS
G
sw
-55 to + 150
(on)
Max.
± 12
0.02
IRF7335D1
8.1
2.0
1.3
30
10
81
50
13.4 m
Q1
5.5 nC
13 nC
1.0V
Max.
Dual FETKY™
62.5
20
PD- 94546
and Schottky
9.6 m
Q2
6.4 nC
18 nC
0.43V
Units
W/°C
Units
°C/W
mJ
°C
W
V
A
V

Related parts for IRF7335D1

IRF7335D1 Summary of contents

Page 1

... Notes  through … are on page 10V„ 10V„ GS PD- 94546 IRF7335D1 Dual FETKY™ and Schottky R 13 (on 5 1.0V 0.43V SD Max. ...

Page 2

Electrical Characteristics Parameter Drain-to-Source BV DSS Breakdown Voltage Breakdown Voltage BV DSS/ Tem. Coefficient Static Drain-Source R DS (on) on Resistance Gate Threshold Voltage V GS(th) Drain-Source Leakage I DSS Current Gate-Source Leakage I GSS Current Forward Transconductance g FS ...

Page 3

Q1 - Control FET 1000 VGS TOP 10V 5.0V 4.5V 3.0V 2.7V 100 2.5V 2.2V BOTTOM 2. 2.0V 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ...

Page 4

Q1 - Control FET 80 60 TOP 40 BOTTOM 20 20µs PULSE WIDTH Tj = 25°C 0 0.0 0.4 0.8 1 Source-to-Drain Voltage (V) Fig. 7. Typical Reverse Output Characteristics 80 VGS TOP 7.5V 4.5V 3.5V 2.5V 60 ...

Page 5

Q1 - Control FET 2500 0V MHZ C iss = SHORTED 2000 C rss = oss = Ciss ...

Page 6

Q1 - Control FET 2 10A 4.5V 1.5 1.0 0.5 -60 -40 - 100 120 140 160 Junction Temperature (°C) Fig 19. Normalized On-Resistance 0.030 0.025 ...

Page 7

Junction Temperature (°C) Fig 25. Maximum Drain Current Vs.CaseTemperature Current Regulator Same Type as D.U.T. 50K .2 F 12V . 3mA I G ...

Page 8

Schottky Diode Characteristics 100 10 1 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage Drop - Fig Maximum Forward Voltage Drop Characteristics 8 100000 10000 Tj = 150°C ...

Page 9

SD Fig. 31 Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse „ Recovery Current - + D.U.T. V Waveform DS Re-Applied G + Voltage Inductor Curent - ...

Page 10

Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by loss rms ds( ...

Page 11

SO-14 Package Details SO-14 Part Marking www.irf.com 11 ...

Page 12

SO-14 Tape and Reel Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Pulse width 300 µs; duty cycle 2%. ƒ When mounted on 1 inch square copper board. „ Combined Q1, Pwr V pins. ...

Related keywords