IRF7470 International Rectifier, IRF7470 Datasheet

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IRF7470

Manufacturer Part Number
IRF7470
Description
Power MOSFET(Vdss=40V/ Rds(on)max=13mohm/ Id=10A)
Manufacturer
International Rectifier
Datasheet

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Quantity
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l
Benefits
Absolute Maximum Ratings
Thermal Resistance
Notes  through „ are on page 8
l
l
l
www.irf.com
Applications
Symbol
V
V
I
I
I
P
P
T
Symbol
R
R
D
D
DM
DS
GS
D
D
J
@ T
@ T
, T
JL
JA
and Current
High Frequency DC-DC Converters
@T
@T
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
with Synchronous Rectification
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient „
Linear Derating Factor
at 4.5V V
Parameter
Parameter
GS

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
G
S
S
S
V
40V
1
2
3
4
DSS
T o p V ie w
Typ.
–––
–––
HEXFET
8
7
6
5
-55 to + 150
R
± 12
D
D
D
D
Max.
DS(on)
A
A
0.02
8.5
2.5
1.6
40
10
85
13m
®
Power MOSFET
Max.
max
20
50
IRF7470
SO-8
PD- 93913C
mW/°C
Units
Units
°C/W
10A
V
°C
W
W
I
V
A
D
1
3/25/01

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IRF7470 Summary of contents

Page 1

... SMPS MOSFET V DSS 40V 10V GS @ 10V GS  ƒ ƒ Typ. ––– ––– PD- 93913C IRF7470 ® HEXFET Power MOSFET R max I DS(on) D 13m 10A SO-8 Max. Units 40 V ± ...

Page 2

... IRF7470 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com 100 TOP BOTTOM 10 ° 1 0.1 100 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0.5 = 25V 0.0 2.8 3.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7470 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V 2.0V 2.0V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 10A V = 10V GS 0 ...

Page 4

... IRF7470 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 150 ° 0.1 0.2 0.6 1.0 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 100 125 150 ° 10 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7470 D.U. 10V Pulse Width µs Duty Factor t t ...

Page 6

... IRF7470 0.030 0.025 0.020 2.7V 0.015 4.5V 0.010 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit ...

Page 7

... SO-8 Part Marking www.irf.com ° (. IRF7470 ILLIM .05 32 .06 88 1 ...

Page 8

... IRF7470 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM E NSIO DIM E NS ION S ARE SHO ILL IM E TER S (INC & ...

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