IRF7705GPBF International Rectifier, IRF7705GPBF Datasheet

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IRF7705GPBF

Manufacturer Part Number
IRF7705GPBF
Description
Power MOSFET
Manufacturer
International Rectifier
Datasheet
www.DataSheet.in
Description
l
l
l
l
l
l
l
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.2mm)
Available in Tape & Reel
Lead-Free
Halogen-Free
@T
@T
T
STG
A
A
A
A
®
= 25°C
= 70°C
= 25°C
= 70°C
power MOSFETs from International Rectifier
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
provides the de-
GS
GS
ƒ
@ -10V
@ -10V
!
"
!Ã2ÃT
"Ã2ÃT
V
-30V
Ã2Ã9
Ã2ÃB
DSS
B
IRF7705GPbF
9
HEXFET
R
'Ã2Ã9
&Ã2ÃT
%Ã2ÃT
$Ã2Ã9
DS(on)
-55 to + 150
18 @V
30 @V
Max.
'
&
%
$
Max.
0.012
0.96
-8.0
-6.0
± 20
83
-30
-30
1.5
max (mW)
GS
GS
®
= -10V
= -4.5V
Power MOSFET
TSSOP-8
PD- 96142A
-8.0A
-6.0A
Units
Units
I
W/°C
°C/W
05/14/09
D
°C
V
A
V
1

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IRF7705GPBF Summary of contents

Page 1

... Continuous Drain Current -10V GS Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Parameter ƒ Maximum Junction-to-Ambient PD- 96142A IRF7705GPbF ® HEXFET Power MOSFET V R max (mW) DSS DS(on) -30V -10V -8.0A ...

Page 2

Electrical Characteristics @ T V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I ...

Page 3

DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150 0.1 2.0 2 Fig 3. Typical Transfer Characteristics www.irf.com www.DataSheet.in VGS TOP -10V ...

Page 4

C iss 2400 1600 800 C oss C rss Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150 0.1 0.2 0 Fig 7. Typical Source-Drain Diode ...

Page 5

T , Case Temperature Fig 9. Maximum Drain Current Vs. 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 0.1 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com www.DataSheet.in ...

Page 6

GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs Fig 14a. Basic Gate Charge Waveform 6 www.DataSheet. -8.0A 4.0 5.0 ...

Page 7

TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! DI9@Y 6SF r "Y r! 'YÃi 8 iii hhh 8 'ÃTVSA 9D@ " Note: For the most current drawing ...

Page 8

G@) GPUÃ8P9@ TSSOP-8 Tape and Reel Information IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 www.DataSheet.in UCDTÃDTÃ6IÃDSA''$! 7A 6SUÃIVH7@S 96U@Ã8P9@Ã`XX  Ã2ÃGrhqA…rrÃvqvph‡‚… %À€ A@@9Ã9DS@8UDPI IPU@T) 'À€ ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$#  Data and specifications ...

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