IRF7750GPBF International Rectifier, IRF7750GPBF Datasheet

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IRF7750GPBF

Manufacturer Part Number
IRF7750GPBF
Description
Power MOSFET
Manufacturer
International Rectifier
Datasheet
www.DataSheet.in
l
l
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l
l
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Absolute Maximum Ratings
Thermal Resistance
Description
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Interna-
tional Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.1mm)
Available in Tape & Reel
Lead-Free
Halogen-Free
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
®
power MOSFETs from International Rectifier
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
provides the designer
Parameter
Parameter
GS
GS
ƒ
@ -4.5V
@ -4.5V
!
"
!Ã2ÃT
"Ã2ÃT
Ã2Ã9
Ã2ÃB
R
IRF7750GPbF
DS(on)
HEXFET
V
'Ã2Ã9!
$Ã2ÃB!
&Ã2ÃT!
%Ã2ÃT!
DSS
-55 to + 150
'
&
%
$
Max.
Max.
0.008
125
±4.7
±3.8
0.64
±38
± 12
-20
1.0
= 0.030Ω
= -20V
®
Power MOSFET
TSSOP-8
PD-96144A
Units
Units
W/°C
°C/W
05/14/09
°C
V
A
V
1

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IRF7750GPBF Summary of contents

Page 1

... GS Continuous Drain Current -4.5V GS Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Parameter ƒ Maximum Junction-to-Ambient PD-96144A IRF7750GPbF ® HEXFET Power MOSFET V = -20V DSS R = 0.030Ω DS(on) ' & 'Ã2Ã9! & ...

Page 2

Electrical Characteristics @ T V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage GSS ...

Page 3

VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V 100 -2.00V BOTTOM -1.50V 10 1 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 Gate-to-Source Voltage (V) GS Fig 3. ...

Page 4

DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1.00 0.80 0.60 0.40 0.20 -75 -50 Fig 7. Threshold Voltage Vs. Temperature 4 www.DataSheet. 0V 1MHz ...

Page 5

T , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 0.1 0.00001 Fig 11. Typical Effective ...

Page 6

1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) Fig 12. Normalized On-Resistance Vs. Temperature 6 www.DataSheet. -4. 100 120 140 160 ° ...

Page 7

TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! DI9@Y 6SF r "Y r! 'YÃi 8 iii hhh 8 'ÃTVSA 9D@ " Note: For the most current drawing ...

Page 8

G@) GPUÃ8P9@ TSSOP-8 Tape and Reel Information IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 www.DataSheet.in UCDTÃDTÃ6IÃDSA''$! 7A 6SUÃIVH7@S 96U@Ã8P9@Ã`XX  Ã2ÃGrhqA…rrÃvqvph‡‚… %À€ A@@9Ã9DS@8UDPI IPU@T) 'À€ ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$#  Data and specifications ...

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