IRFB38N20D International Rectifier, IRFB38N20D Datasheet - Page 4

• Manufacturer Part Number: IRFB38N20D
• Description: Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A)
• Manufacturer: International Rectifier

IRFB/IRFS/IRFSL38N20D
100000
1000.00
10000
4
100.00
1000
10.00
100
1.00
0.10
10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
0.5
Forward Voltage
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
10
T J = 25°C
1.0
= C gs + C gd , C ds
Crss
Ciss
Coss
1.5
f = 1 MHZ
100
V GS = 0V
2.0
SHORTED
2.5
1000
1000
100
0.1
10
12
10
Fig 8. Maximum Safe Operating Area
1
7
5
2
0
0

1
I
Fig 6. Typical Gate Charge Vs.
D
Tc = 25°C
Tj = 175°C
Single Pulse
=
26A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
16
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
32

V
V
V
DS
DS
DS
= 160V
= 100V
= 40V
48
100
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10msec
64
100µsec
1msec
1000
80