IRFH5301PBF

Manufacturer Part NumberIRFH5301PBF
DescriptionHEXFET Power MOSFET
ManufacturerInternational Rectifier
IRFH5301PBF datasheet
 
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V
DS
R
DS(on) max
(@V
= 10V)
GS
Q
g (typical)
R
G (typical)
I
D
100
(@T
= 25°C)
c(Bottom)
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Synchronous MOSFET for Buck Converters
Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Low RDSon (<1.85mΩ)
Low Thermal Resistance to PCB (<1.1°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
IRFH5301TRPBF
IRFH5301TR2PBF
Absolute Maximum Ratings
V
Drain-to-Source Voltage
DS
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
I
@ T
= 25°C
D
A
Continuous Drain Current, V
I
@ T
= 70°C
D
A
Continuous Drain Current, V
I
@ T
= 25°C
D
C(Bottom)
Continuous Drain Current, V
I
@ T
= 100°C
D
C(Bottom)
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 25°C
Power Dissipation
D
C(Bottom)
Linear Derating Factor
T
Operating Junction and
J
T
Storage Temperature Range
STG
Notes  through
are on page 8
www.irf.com
30
V
1.85
mΩ
37
nC
1.5
A
Form
PQFN 5mm x 6mm
Tape and Reel
PQFN 5mm x 6mm
Tape and Reel
Parameter
@ 10V
GS
@ 10V
GS
@ 10V
GS
@ 10V
GS
g
g
g
www.DataSheet4U.com
IRFH5301PbF
®
HEXFET
Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Note
Quantity
4000
400
Max.
Units
30
± 20
35
28
h
100
h
100
400
3.6
110
0.029
-55 to + 150
V
A
W
W/°C
°C
1
11/18/09

IRFH5301PBF Summary of contents

  • Page 1

    ... PQFN 5mm x 6mm Tape and Reel Parameter @ 10V GS @ 10V GS @ 10V GS @ 10V www.DataSheet4U.com IRFH5301PbF ® HEXFET Power MOSFET PQFN 5X6 mm Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability ...

  • Page 2

    Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

  • Page 3

    PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25° ...

  • Page 4

    150°C 100 25°C 1 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 200 Limited By Package 160 120 ...

  • Page 5

    125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage D.U ...

  • Page 6

    SD • Fig 16. DUT Fig 17. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current ...

  • Page 7

    PQFN 5x6 Outline "B" Package Details http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER Note: For the most current drawing please refer to IR website at: www.irf.com ...

  • Page 8

    ... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. ...