IRFIZ48V International Rectifier, IRFIZ48V Datasheet

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IRFIZ48V

Manufacturer Part Number
IRFIZ48V
Description
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A)
Manufacturer
International Rectifier
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFIZ48V
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFIZ48VPBF
Manufacturer:
IR
Quantity:
12 500
www.irf.com
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
l
Description
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
I
I
I
P
V
I
E
dv/dt
T
T
R
R
D
D
DM
AR
J
STG
D
GS
AR
@ T
@ T
JC
JA
@T
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter
‡
‡
ƒ‡
GS
GS
‡
@ 10V
@ 10V
ˆ
G
300 (1.6mm from case )
Typ.
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
Max.
0.29
290
± 20
5.3
39
27
43
72
15
IRFIZ48V
®
R
Power MOSFET
DS(on)
Max.
V
TO-220 FULLPAK
3.5
65
DSS
I
D
= 39A
= 60V
= 12m
PD-94072
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
02/12/01
1

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IRFIZ48V Summary of contents

Page 1

... Parameter R Junction-to-Case JC R Junction-to-Ambient JA www.irf.com ˆ 10V GS @ 10V GS ‡ ‡ ‡ ƒ‡ 300 (1.6mm from case ) Typ. PD-94072 IRFIZ48V ® HEXFET Power MOSFET 60V DSS R = 12m DS(on 39A D S TO-220 FULLPAK Max. Units 290 ...

Page 2

... IRFIZ48V Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP BOTTOM 100 10 ° 1 100 0.1 Fig 2. Typical Output Characteristics 3 2.5 ° 2.0 1.5 1.0 0.5 = 25V 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRFIZ48V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 72A V = 10V 100 120 140 160 180 ° ...

Page 4

... IRFIZ48V 4000 0V SHORTED C rss = oss = 3000 Ciss 2000 1000 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 0.1 0.2 0.6 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Fig 10a. Switching Time Test Circuit 90% 90% 125 150 175 ° 10% 10 Fig 10b. Switching Time Waveforms Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRFIZ48V D.U.T. D.U. 10V 10V µs µs ...

Page 6

... IRFIZ48V 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 400 300 ...

Page 7

... Ground Plane ƒ Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% IRFIZ48V + =10V * ...

Page 8

... IRFIZ48V Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) 3.70 (.145) 3.20 (.126) 16.00 (.630) 15.80 (.622) 1.15 (.045 3.30 (.130) 3.10 (.122) 13.70 (.540) 13.50 (.530) 0.90 (.035) 1.40 (.055) 3X 0.70 (.028) 3X 1.05 (.042) 0.25 (.010) 2.54 (.100) 2X Part Marking Information TO-220 Fullpak ...

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