IRFN350 International Rectifier, IRFN350 Datasheet

no-image

IRFN350

Manufacturer Part Number
IRFN350
Description
POWER MOSFET N-CHANNEL
Manufacturer
International Rectifier
Datasheet
www.DataSheet4U.com
HEXFET
400 Volt, 0.315 HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance com-
bined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.
The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology. The SMD-1 will give designers the extra flex-
ibility they need to increase circuit board density. Inter-
national Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increas-
ing the size of the termination pads, thereby enhancing
thermal and electrical performance.
Absolute Maximum Ratings
I D @ V GS = 10V, T C = 100°C Continuous Drain Current
I D @ V GS = 10V, T C = 25°C
Previous Datasheet
P D @ T C = 25°C
T STG
dv/dt
V GS
E AR
E AS
I DM
I AR
T J
®
POWER MOSFET
Max. Power Dissipation
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Parameter
To Order
Index
Product Summary
Features:
Part Number
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light-weight
IRFN350
Provisional Data Sheet No. PD-9.1551
300 (for 5 seconds)
Next Data Sheet
BV
400V
IRFN350
2.6 (typical)
-55 to 150
DSS
150
±20
700
1.2
4.0
14
56
14
15
9
N-CHANNEL
IRFN350
R
0.315
DS(on)
W/K
Units
V/ns
o
mJ
mJ
W
C
V
A
g
14A
A
I
D

Related parts for IRFN350

IRFN350 Summary of contents

Page 1

... IRFN350 Features: Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Parameter To Order Next Data Sheet IRFN350 N-CHANNEL DSS DS(on) D 400V 0.315 14A IRFN350 Units 150 W 1.2 W/K ±20 V 700 4.0 V/ns -55 to 150 o C 300 (for 5 seconds) 2 ...

Page 2

... Previous Datasheet www.DataSheet4U.com IRFN350 Device Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward ...

Page 3

... Previous Datasheet www.DataSheet4U.com IRFN350 Device Fig. 1 — Typical Output Characteristics T = 25°C C Fig. 3 — Typical Transfer Characteristics Fig. 5 — Typical Capacitance Vs. Drain-to-Source Voltage Index Next Data Sheet Fig. 2 — Typical Output Characteristics T = 150° 14A Fig. 4 — Normalized On-Resistance Vs.Temperature 14A Fig. 6 — ...

Page 4

... Previous Datasheet www.DataSheet4U.com IRFN350 Device Fig. 7 — Typical Source-to-Drain Diode Forward Voltage Fig. 9 — Maximum Drain Current Vs. Case Temperature Fig. 10a — Switching Time Test Circuit Index Next Data Sheet 1000 OPERATION IN THIS AREA LIMITED BY R 100 ° ...

Page 5

... Previous Datasheet www.DataSheet4U.com IRFN350 Device 1 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration Fig. 12a — Unclamped Inductive Test Circuit Fig. 12c — Max. Avalanche Energy vs. Current Index Notes: 1. Duty factor ...

Page 6

... Previous Datasheet www.DataSheet4U.com IRFN350 Device Fig. 13b — Basic Gate Charge Waveform Case Outline and Dimensions — SMD-1 All dimensions in millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR FAR EAST: K& ...

Related keywords