2SK3050 Rohm, 2SK3050 Datasheet

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2SK3050

Manufacturer Part Number
2SK3050
Description
Small Switching
Manufacturer
Rohm
Datasheet
Transistors
Small switching (600V, 2A)
2SK3050
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
5) Easily designed drive circuits.
6) Easy to use in parallel.
Silicon N-channel
MOSFET
∗Pw≤10µs, Duty cycle≤1%
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Total power dissipation (Tc=25°C)
Channel temperature
Storage temperature
Features
Structure
Absolute maximum ratings (Ta=25°C)
Packaging specifications
Type
2SK3050
guaranteed to be ±30V.
Package
Code
Basic ordering unit (pieces)
Parameter
Continuous
Pulsed
Continuous
Pulsed
GSS
)
Symbol
V
I
V
Tstg
Taping
I
DRP
Tch
2500
DP
I
P
I
DSS
GSS
DR
TL
D
D
External dimensions (Unit : mm)
ROHM : CPT3
EIAJ : SC-63
−55 to +150
Limits
600
±30
150
20
2
6
2
6
0.75
Unit
2.3±0.2
°C
°C
W
V
V
A
A
A
A
0.9
(1)
6.5±0.2
5.1
(2)
+0.2
−0.1
2.3±0.2
(3)
0.65±0.1
C0.5
1.0±0.2
2.3
0.5±0.1
0.5±0.1
+0.2
−0.1
2SK3050
(1) Gate
(2) Drain
(3) Source
1/4

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2SK3050 Summary of contents

Page 1

... Type Basic ordering unit (pieces) 2500 2SK3050 External dimensions (Unit : mm) 6.5±0.2 C0.5 +0.2 5.1 −0.1 0.65±0.1 0.75 0.9 2.3±0.2 2.3±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 Limits Unit 600 V ± °C 150 −55 to +150 °C 2SK3050 +0.2 2.3 −0.1 0.5±0.1 0.5±0.1 1.0±0.2 (1) Gate (2) Drain (3) Source 1/4 ...

Page 2

... Ta=125°C 75°C 20 25°C −25° 0.01 0.02 0.05 0.1 0.2 0 (A) DRAIN CURRENT : I D Fig.5 Static drain-source on-state Fig.6 Static drain-source on-state resistance vs. drain current 2SK3050 =0V DS =0V GS =0V GS =1mA D =10V =10V 300V = 10V V DS Ta= −25°C Pulsed 25°C 2 75°C 125° ...

Page 3

... V GS 2000 12 Pulsed 10 1000 8 500 6 200 4 100 0.05 0.1 0.2 0 REVERSE DRAIN CURRENT : I Fig.14 Reverse recovery time vs. reverse drain current 2SK3050 5 = Pulsed 2 Ta=125°C 75°C 1 25°C −25°C 0.5 0.2 0.1 0.05 0.02 0 0.2 0.4 0.6 0.8 1 SOURCE-DRAIN VOLTAGE : V Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) ...

Page 4

... D.U. Fig.18 Gate charge measurement circuit Tc=25°C θ (t)=r(t) · θ th(ch-c) th(ch-c) θ =6.25°C/W th(ch- 100m 1 10 Pulse width d(on Fig.17 witching time waveforms V DS 2SK3050 90% 50% 10% 90 d(off) t off 4/4 ...

Page 5

... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...

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