IRL1404 International Rectifier, IRL1404 Datasheet - Page 2

• Manufacturer Part Number: IRL1404
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
 Repetitive rating; pulse width limited by
‚ Starting T
ƒ I
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
I
I
L
Notes:
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
C
C
C
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
D
2
fs
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
R
T
max. junction temperature. ( See fig. 11).
SD
J
G
eff.
≤ 175°C.
≤ 95A, di/dt ≤ 160A/µs, V
= 25Ω, I
/∆T
J
J
Internal Drain Inductance
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Static Drain-to-Source On-Resistance
= 25°C, L = 0.35mH
AS
= 95A. (See Figure 12).
Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
… C
† Calculated continuous current based on maximum allowable
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
as C
package refer to Design Tip # 93-4.
junction temperature; for recommended current-handing of the
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.038 –––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
oss
1.0
–––
–––
–––
–––
–––
40
93
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
6590 –––
6650 –––
1510 –––
1710 –––
1480 –––
–––
–––
–––
–––
–––
–––
––– -200
–––
–––
–––
270
350
–––
–––
–––
170
while V
–––
–––
18
38
63
37
4.5
7.5
160†
–––
–––
250
–––
–––
250
200
140
–––
–––
–––
–––
–––
5.9
3.0
1.3
4.0
20
48
60
640
94
DS
is rising from 0 to 80% V
V/°C
mΩ
nH
ns
nC
µA
nA
nC
pF
ns
V
V
S
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
V
V
V
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
GS
GS
GS
G
D
= 95A
= 95A
= 25°C, I
= 25°C, I
= 0.25Ω „
= 2.5Ω
= V
= 25V, I
= 40V, V
= 32V, V
= 32V
= 25V
= 0V, I
= 10V, I
= 4.3V, I
= 20V
= -20V
= 5.0V, See Fig. 6 „
= 20V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
D
GS
GS
Conditions
= 95A, V
= 95A
= 250µA
= 95A
V
= 95A „
DSS.
= 40A „
= 0V to 32V
GS
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V
= 0V, T
= 4.5V
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D
GS
= 1mA
J
= 150°C
= 0V „
G
G
S
+L
S
D
D
D
S
)