BU2522AW Philips Semiconductors, BU2522AW Datasheet

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BU2522AW

Manufacturer Part Number
BU2522AW
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
PINNING - SOT429
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
tab
CESM
CEO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
1
CONDITIONS
V
T
I
f = 64 kHz
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
with heatsink compound
in free air
C
Csat
2
BE
mb
BE
mb
1
= 6.0 A; I
3
= 0 V
= 6.0 A; f = 64 kHz
= 0 V
25 ˚C
25 ˚C
B
= 1.2 A
SYMBOL
b
TYP.
TYP.
MIN.
0.12
Product specification
6.0
-65
45
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU2522AW
MAX.
MAX.
MAX.
1500
e
1500
c
0.25
800
125
800
150
125
150
150
5.0
1.0
10
25
10
25
6
9
6
-
-
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A
A
s

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BU2522AW Summary of contents

Page 1

... kHz kHz Csat PIN CONFIGURATION CONDITIONS average over any 20 ms period ˚C mb CONDITIONS with heatsink compound in free air 1 Product specification BU2522AW TYP. MAX. UNIT - 1500 V - 800 125 W - 5 0.12 0.25 s SYMBOL ...

Page 2

... MHz 6 170 H; Csat 5.4 nF 0.7 A;L = 0.6 H;-V B(end 3.33A 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical Fig.2. Oscilloscope display for V CEOsust 2 Product specification BU2522AW MIN. TYP. MAX. UNIT - - 0. 2 0.25 mA 7.5 13 800 - - 5 1 ...

Page 3

... IBM Fig.7. Typical DC current gain 150 v nominal 1.2 adjust for ICsat 1 0.9 0.8 0.7 0.6 Cfb 0.5 0.4 0.1 Fig.8. Typical base-emitter saturation voltage. 3 Product specification BU2522AW VCC LC LB T.U.T. = 140 1500 2.2 nF; I (end BU2522A -40 C 0.1 1 ...

Page 4

... Fig.13. Normalised power dissipation. C BU2522AF 10 1 0.1 0.01 0.001 1E- 85˚ kHz 4 Product specification BU2522AW BU2522AF ts 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 parameter 85˚ kHz Normalised Power Derating PD 100 120 ...

Page 5

... CDC Second-breakdown limits independant of temperature. September 1997 BU2520A 100 Fig.16. Reverse bias safe operating area 1000 VCE / ˚ Product specification BU2522AW BU2522AF 500 1000 1500 VCE / V Rev 1.100 T j jmax ...

Page 6

... Net Mass 3.5 21 max 4.0 max 15.5 min 2.2 max 3.2 max Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". September 1997 16 max 1.8 5.3 7.3 seating 15.5 max plane 2 1.1 0.4 M 5.45 5.45 Fig.17. SOT429; pin 2 connected to mounting base. 6 Product specification BU2522AW 5.3 max o 3.5 max 0.9 max Rev 1.100 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2522AW Rev 1.100 ...

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