BU2522AX Philips Semiconductors, BU2522AX Datasheet - Page 5

• Manufacturer Part Number: BU2522AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
September 1997
Silicon Diffused Power Transistor
Fig.15. Reverse bias safe operating area. T
120
110
100
0.001
90
80
70
60
50
40
30
20
10
0.01
0.1
0
10
1E-06
Fig.13. Normalised power dissipation.
1
Fig.14. Transient thermal impedance.
30
20
10
0
PD%
0
Zth / (K/W)
D = 0
0
IC / A
0.05
0.02
Z
0.5
0.2
0.1
PD% = 100 P
th j-hs
20
= f(t); parameter D = t
1E-04
40
500
60
VCE / V
D
Ths / C
/P
t / s
D 25˚C
80
Normalised Power Derating
1E-02
1000
with heatsink compound
P
= f (T
100
D
BU2522AF
t
p
p
hs
T
120
/T
)
1E+00
1500
D =
140
t
T
p
j
t
T
jmax
5
Second-breakdown limits independant of temperature.
Fig.16. Forward bias safe operating area. T
I
CDC
0.01
100
0.1
10
1
& I
1
IC / A
ICDC
Mounted with heatsink compound.
ICM
CM
= f(V
Ptot
CE
10
); I
CM
= 0.01
single pulse; parameter t
100
Product specification
1000
BU2522AX
10 ms
1 ms
tp =
100 us
DC
30 us
BU2520AF
VCE / V
hs
Rev 2.300
= 25 ˚C
p