BU2522DF Philips Semiconductors, BU2522DF Datasheet
BU2522DF
Related parts for BU2522DF
BU2522DF Summary of contents
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... kHz kHz Csat PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU2522DF TYP. MAX. UNIT - 1500 V - 800 5 2.2 V ...
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... CONDITIONS MHz 6 170 0 0 B(end) B (-dI / Product specification BU2522DF MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1 2 150 - mA 7.5 13 ...
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... IBM Fig.5. Typical DC current gain 150 v nominal 1.2 adjust for ICsat 1.1 1.0 Lc 0.9 0.8 0.7 0.6 Cfb 0.5 0.4 0.1 Fig.6. Typical base-emitter saturation voltage. 3 Product specification BU2522DF VCC LC LB T.U.T. Rbe = 140 1500 2.2 nF; I (end hFE 125 ...
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... Fig.11. Typical collector storage and fall time 120 110 Tj = 125 C 100 Fig.12. Normalised power dissipation Product specification BU2522DF BU2522AF Poff / 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 85˚C j Poff = parameter kHz B C BU2522AF ts 0.2 0.4 0.6 0 ...
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... 1E+ BU2522AF 0.1 0.01 Fig.15. Forward bias safe operating area. T 1500 I & I CDC T Second-breakdown limits independant of temperature. j jmax 5 Product specification BU2522DF BU2520AF tp = ICM = 0. ICDC 100 us Ptot 100 1000 VCE / single pulse; parameter Mounted with heatsink compound ˚ ...
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... Fig.16. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU2522DF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.200 o 45 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2522DF Rev 1.200 ...