BU2523AF Philips Semiconductors, BU2523AF Datasheet

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BU2523AF

Manufacturer Part Number
BU2523AF
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BU2523AF.pdf (6 pages)
Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
f = 64 kHz
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
with heatsink compound
in free air
C
Csat
BE
hs
BE
hs
1
= 5.5 A; I
2
= 0 V
= 5.5 A; f = 64 kHz
= 0 V
25 ˚C
3
25 ˚C
B
= 1.1 A
SYMBOL
b
TYP.
TYP.
MIN.
0.15
Product specification
5.5
-55
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU2523AF
MAX.
MAX.
MAX.
1500
e
1500
c
800
800
175
150
150
5.0
0.3
2.8
11
29
45
11
29
10
45
7
7
-
-
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A
A
s

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BU2523AF Summary of contents

Page 1

... kHz kHz Csat PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU2523AF TYP. MAX. UNIT - 1500 V - 800 5 0.15 0.3 s ...

Page 2

... CONDITIONS 200 H; C Csat C V 145 0. B(end 0 ICsat end Fig.2. Switching times definitions. 2 Product specification BU2523AF MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1 2 1.0 mA 7.5 13 800 ...

Page 3

... Product specification BU2523AF BU2523AF/X Ths = 25 C Ths = 85 C IC/ IC/ sat = parameter BU2523AF/X Ths = 25 C Ths = 4 sat = parameter BU2523AF/DF/AX/DX Ths = 25 C Ths = 85 C 0 Fig.8. Typical losses. ...

Page 4

... LC LB T.U.T. = 150 1.5 mH 1450 0. B(end) 1000 VCE / V BU2523AF/ frequency (kHz) during normal running vs. frequency of Csat operation for optimum performance VCL CFB BU2523 Area where fails occur 1500 T j jmax 80 Rev 1 ...

Page 5

... Fig.15. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 5 Product specification BU2523AF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.100 o 45 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Product specification BU2523AF Rev 1.100 ...

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