BU2532AL Philips Semiconductors, BU2532AL Datasheet

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BU2532AL

Manufacturer Part Number
BU2532AL
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors up to 82 kHz.
QUICK REFERENCE DATA
PINNING - SOT430
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
s
C
CM
B
BM
heat collector
PIN
sink
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
1
CONDITIONS
V
T
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
-
in free air
C
Csat
2
BE
mb
BE
mb
1
= 7.0 A; I
3
= 0
= 7.0 A; I
= 0 V
25 ˚C
25 ˚C
B
= 1.17 A
B(end)
= 1 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
1.4
-55
35
7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU2532AL
MAX.
MAX.
MAX.
1500
e
1500
c
800
125
800
200
125
150
150
5.0
1.8
1.0
16
40
16
40
10
15
10
-
-
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A
A
s

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BU2532AL Summary of contents

Page 1

... T 25 ˚ Csat B(end) PIN CONFIGURATION CONDITIONS average over any 20 ms period ˚C mb CONDITIONS - in free air 1 Product specification BU2532AL TYP. MAX. UNIT - 1500 V - 800 125 1.4 1.8 s SYMBOL MIN ...

Page 2

... 1. CONDITIONS 100 H; C Csat 138 1 B(end) I Csat t IC IBend Fig.2. Switching times definitions. 2 Product specification BU2532AL MIN. TYP. MAX. UNIT - - 1 2 1 12.5 TYP. ...

Page 3

... 100 100 Fig.8. Normalised power dissipation Product specification BU2532AL BU2530/2AL IC/ IC/ sat = parameter BU2530/2AL ...

Page 4

... A FB B(end) September 1997 BU2530AL/32AL 1E+00 0 100 Fig.11. Reverse bias safe operating area VCL CFB = 150 0 Product specification BU2532AL BU2530/32AL Area where fails occur 1000 1500 VCE / jmax Rev 1.100 ...

Page 5

... Philips Semiconductors Silicon Diffused Power Transistor MECHANICAL DATA Dimensions in mm Net Mass 25.5 26.5 2.5 19.5 min September 1997 20.5 max 3.1 3.5 6.0 10.0 1.5 1.5 2.5 max 3.5 max 0.8 1.0 5.45 5.45 Fig.12. SOT430; pin 2 connected to mounting base. 5 Product specification BU2532AL 5.3 max 3.0 3.0 4.0 3.0 seating plane 0.8 max 0.4 M 3.0 max Rev 1.100 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Product specification BU2532AL Rev 1.100 ...

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