IDT70T3589 Integrated Device Technology, IDT70T3589 Datasheet - Page 9

• Manufacturer Part Number: IDT70T3589
• Description: 64k X 36 Sync, 3.3v/2.5v Dual-port Ram, Interleaved I/o S
• Manufacturer: Integrated Device Technology

Absolute Maximum Ratings
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
2. This is a steady-state DC parameter that applies after the power supply has reached its
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
NOTES:
1. These parameters are determined by device characterization, but are not
2. 3dV references the interpolated capacitance when the input and output switch
3. C
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
NOTES:
1. V
2. Applicable only for TMS, TDI and TRST inputs.
3. Outputs tested in tri-state mode.
Capacitance
(T
(V
(V
(INPUTS and I/O's)
I
I
V
V
V
T
T
T
OUT
OUT
BIAS
STG
JN
TERM
TERM
TERM
Symbol
DD
DDQ
IDT70T3519/99/89S
High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM
V
V
V
V
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
nominal operating value. Power sequencing is not necessary; however, the voltage on
any Input or I/O pin cannot exceed V
production tested.
from 0V to 3V or from 3V to 0V.
A
C
(For V
(For V
Symbol
OH
OH
)
OL
OL
C
OUT
OUT
(3)
DDQ
)
(2)
= +25°C, F = 1.0MH
(2)
IN
|I
|I
|I
Symbol
LO
(3.3V)
(3.3V)
(2.5V)
(2.5V)
LI
LI
(3)
also references C
|
|
|
is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.
DDQ
DDQ
Input Capacitance
Output Capacitance
= 3.3V) DC Output Current
= 2.5V) DC Output Current
Input Leakage Current
JTAG & ZZ Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Parameter
V
with Respect to GND
V
with Respect to GND
Input and I/O Terminal
Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Junction Temperature
DD
DDQ
I/O
Terminal Voltage
(1)
.
Terminal Voltage
Parameter
Rating
(1)
(1)
Z
(1)
(1)
) PQFP ONLY
DDQ
(1)
(1,3)
during power supply ramp up.
Conditions
V
V
OUT
IN
= 3dV
= 3dV
(1,2)
-0.3 to V
-0.3 to V
-0.5 to 3.6
(2)
Commercial
& Industrial
-55 to +125
-65 to +150
I
I
I
I
V
V
CE
OL
OH
OL
OH
(1)
DDQ
DD =
+150
0
= +4mA, V
= +2mA, V
= -4mA, V
= -2mA, V
50
40
DDQ
DDQ
Max.
10.5
= V
8
= Max., V
Max.
+ 0.3
+ 0.3
IH
5666 tbl 07
or CE
,
V
Unit
pF
pF
IN
DDQ
DDQ
DDQ
DDQ
IN
= 0V to V
6.42
1
= 0V to V
= V
= Min.
= Min.
= Min.
= Min.
9
5666 tbl 06
Unit
mA
mA
o
o
o
V
V
V
C
C
C
IL
Test Conditions
, V
DD
OUT
DDQ
(V
= 0V to V
DD
= 2.5V ± 100mV)
DDQ
Industrial and Commercial Temperature Ranges
Min.
70T3519/99/89S
2.4
2.0
___
___
___
___
___
APRIL 10, 2006
Max.
±30
0.4
0.4
10
10
___
___
5666 tbl 08
Unit
µ A
µ A
µ A
V
V
V
V