SKHI22B Semikron International, SKHI22B Datasheet
SKHI22B
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SKHI22B Summary of contents
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SKHI 21A ... TM SEMIDRIVER Hybrid Dual MOSFET Driver SKHI 21A Preliminary Data Features Typical Applications Absolute Maximum Ratings Symbol Conditions Characteristics Symbol Conditions This technical information specifies semiconductor devices but promises no characteristics. No warranty or ...
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SKHI SEMIDRIVER Hybrid Dual IGBT Driver SKHI Preliminary Data Features Typical Applications Absolute Maximum Ratings Symbol Conditions Characteristics Symbol Conditions This technical information specifies semiconductor devices but promises ...
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SKHI 22 A/B H4 ... TM SEMIDRIVER Hybrid Dual IGBT Driver SKHI 22 A/B H4 Preliminary Data Features Typical Applications Absolute Maximum Ratings Symbol Conditions Characteristics Symbol Conditions This technical information specifies semiconductor devices but promises no ...
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External Components Component R Reference voltage for ----------------------------------- - 1,4 CEstat 10 with VCE ----------------------------------- - 1,8 CEstat 10 C Inhibit time for V CE ...
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... SKHI22A /21A, internal 10k pull-up resistor versus V P9 TDT2 signal input for digital adjustment of interlocking time; SKHI22B switched by bridge to GND (see fig. 3) SKHI22A /21A switched by bridge switching signal input 2 (BOTTOM switch); ...
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SEMIKRON 12-08-2004 Driver Electronic – PCB Drivers 1907 ...
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GND/ IN1 ERROR TDT2 V IN2 GND/0V SELECT TDT1 measured from pin-centre to pin-centre 15. P13 P14 A Fig. 2 Dimension drawing and PIN array (P5 and P6 are not existing for SKHI22A/21A) 1908 Driver Electronic ...
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... V, an error is monitored and the error output signal switches to low level. 1.The following descriptions apply to the use of the hybrid driver for IGBTs as well as for power MOSFETs. For the reason of shortness, only IGBTs will be mentioned in the following. The designations "collector" and "emitter" will refer to IGBTs, whereas for the MOSFETs " ...
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... V IGBT: V for 1700 V IGBT internally limited CE is exceeded, the CEref Adaptation to 1700 V IGBT When using 1700 V IGBTs it is necessary to connect 0,4 W adaptation resistor between the V (S20/ S1) and the respective collector. is the steady-state value of V CEstat to be connected between CE (S6/S15) and E (S9/S12) ...
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... It should, however, be considered that the SKHI 22B is turned and turned off Therefore, the gate voltage will change during every switching procedure. Unfortunately, most datasheets do not indicate negative gate voltages. In order to determine the required charge, and the upper leg of the charge curve may be prolonged to ...
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Persons working with CMOS-devices have to wear a grounded bracelet. Any synthetic floor coverings must not be statically chargeable. Even during transportation the input terminals have to be short-circuited using, for example, conductive rubber. Worktables have to be grounded. The ...