VF20100R Vishay, VF20100R Datasheet - Page 2

• Manufacturer Part Number: VF20100R
• Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
• Manufacturer: Vishay

www.DataSheet.co.kr
VF20100R
Vishay General Semiconductor
Notes
(1)
(2)
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Instantaneous forward voltage per diode
Reverse current per diode
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
ITO-220AB
A
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
= 25 °C unless otherwise noted)
25
20
15
10
5
0
0
Resistive or Inductive Load
Mounted on Specific Heatsink
Fig. 1 - Forward Current Derating Curve
25
50
Case Temperature (°C)
VF20100R-M3/4W
PREFERRED P/N
75
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
100
125
150
A
I
I
I
I
V
V
F
F
F
F
= 25 °C unless otherwise noted)
R
R
= 5 A
= 10 A
= 5 A
= 10 A
A
= 70 V
= 100 V
TEST CONDITIONS
175
UNIT WEIGHT (g)
= 25 °C unless otherwise noted)
New Product
1.75
T
T
T
T
T
T
SYMBOL
A
A
A
A
A
A
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
R
θJC
PACKAGE CODE
Fig. 2 - Forward Power Loss Characteristics Per Diode
SYMBOL
10
8
6
4
2
0
4W
V
I
0
[e-mail]
R
F
(2)
(1)
D = 0.1
D = 0.2
2
Average Forward Current (A)
VF20100R
BASE QUANTITY
D = 0.3
4
TYP.
0.62
0.81
0.54
0.65
5.6
5.0
4
4
-
50/tube
D = 0.5
6
D = t
Document Number: 89322
8
p
D = 0.8
/T
MIN.
0.90
0.72
150
15
-
-
-
-
Revision: 10-Nov-10
DELIVERY MODE
T
10
t
p
D = 1.0
Tube
12
UNIT
UNIT
°C/W
mA
mA
μA
μA
V
Datasheet pdf - http://www.DataSheet4U.net/