TLP4007G Toshiba America Electronic Components, Inc., TLP4007G Datasheet
TLP4007G
Related parts for TLP4007G
TLP4007G Summary of contents
Page 1
... Telecommunication Measurement Equipment Security Equipment FA The Toshiba TLP4007G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage. Normally closed (1-form-B) device, normally opened (1-form-A) device · Peak off-state voltage: 350 V (min) · ...
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... Symbol Test Condition MHz T = 350 OFF OFF MHz OFF MHz 2 TLP4007G Rating Unit -0.5 /°C mA/° 125 °C j 350 V 100 mA -1.0 /°C mA/°C 125 °C j -55 to 125 ° ...
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... ON = 200 OFF OUT OUT 5 3 TLP4007G Min Typ. Max ¾ ¾ ¾ 0.1 ¾ ¾ Min Typ. Max ¾ ¾ 0 ´ 10 ¾ 10 ¾ ¾ 2500 ¾ ...
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... Characteristics curves for 1-form-A/B I – 100 - Ambient temperature Ta (°C) I – 100 Ta = 25° 0.3 0.1 0.6 0.8 1 1.2 Forward voltage V 160 120 100 120 -20 1.4 1.6 1.8 ( TLP4007G I – 100 120 Ambient temperature Ta (°C) 2003-01-14 ...
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... 200 1000 t ON 300 100 30 10 -40 50 100 300 (mA) 5 TLP4007G I – 100 mA t < - Ambient temperature Ta (°C) I – 25° ...
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... 200 W 1000 300 t ON 100 30 t OFF 10 -40 30 100 (mA) 6 TLP4007G I – 100 mA t < - Ambient temperature Ta (°C) I – 25° ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 TLP4007G 020704EBC 2003-01-14 ...