BYX8 Vishay Intertechnology, BYX8 Datasheet - Page 2

• Manufacturer Part Number: BYX8
• Description: Standard Avalanche Sinterglass Diode
• Manufacturer: Vishay Intertechnology

BYX82 to BYX86
Vishay Semiconductors
Maximum Thermal Resistance
T
Electrical Characteristics
T
Typical Characteristics
www.vishay.com
2
Junction ambient
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Reverse recovery charge
amb
amb
94 9572
94 9579
Figure 2. Junction Temperature vs. Reverse/Repetitive Peak
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Figure 1. Max. Thermal Resistance vs. Lead Length
120
100
240
200
160
120
80
60
40
20
80
40
0
0
Reverse / Repetitive Peak Reverse Voltage ( V )
0
0
R
Parameter
Parameter
thJAv
BYX
T
5
82
l
L
R
100K/W
=constant
400
thJAv
BYX
l – Lead Length ( mm )
83
10
57K/W
l
Reverse Voltage
BYX
84
800
15
BYX
85
R
thJAv
BYX
20
86
1200
l = 10 mm, T
on PC board with spacing 25 mm
I
V
V
V
I
I
35K/W
F
F
F
(T
R
R
R
= 1 A
= 0.5 A, I
= I
V
V
= V
= V
= 4 V, f = 1 MHz
amb
25
RRM
R
R
RRM
RRM
= 1 A, di/dt = 5 A/µs
= 25 °C unless otherwise specified)
1600
30
Test condition
Test condition
, T
R
L
= 1 A, i
j
= constant
= 100 °C
R
= 0.25 A
94 9573
94 9574
Sub type
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
0.01
Sub type
0.1
10
30
24
18
12
1
6
0
Figure 3. Forward Current vs. Forward Voltage
0.1
0
T
j
=175°C
Scattering Limits
Symbol
0.6
C
Q
V
I
I
t
V
V
R
R
rr
F
D
rr
F
R
– Forward Voltage ( V )
1
– Reverse Voltage ( V )
T
Symbol
1.2
j
R
R
=25°C
f=1MHz
T
thJA
thJA
j
=25°C
Min
1.8
10
Typ.
0.9
0.1
10
20
2.4
2
3
Document Number 86052
Value
100
45
100
3.0
Rev. 4, 07-Jan-03
Max
1.0
25
1
4
6
VISHAY
Unit
K/W
K/W
Unit
µC
µA
µA
pF
µs
V