NCP1606 ON Semiconductor, NCP1606 Datasheet - Page 5

• Manufacturer Part Number: NCP1606
• Description: Cost Effective Power Factor Controller
• Manufacturer: ON Semiconductor

RAMP CONTROL
OVER AND UNDERVOLTAGE PROTECTION
GATE DRIVE SECTION
3. Parameter characterized and guaranteed by design, but not tested in production.
ELECTRICAL C
(Unless otherwise specified: For typical values, T
1 nF, Ct = 1 nF, CS = 0 V, Control = open, ZCD = open)
t
CT(discharge)
V
I
V
I
OVP(HYS)
Symbol
V
CHARGE
OUT(start)
t
V
SD
t
V
V
V
START
t
CTMAX
t
SYNC
I
R
R
PWM
t
OVP
ZCD
t
SD
SD
OVP
UVP
rise
fall
OH
HYS
OL
H
L
Shutdown Threshold (V
Enable Threshold (V
Shutdown Comparator Hysteresis
Zero current detection propagation delay
Minimum detectable ZCD pulse width
Drive off restart timer
Charge Current (V
Time to discharge a 1 nF Ct capacitor from V
Maximum Ct level before DRV switches off
Propagation delay of the PWM comparator
Dynamic overvoltage protection (OVP) triggering current:
NCP1606A
NCP1606B @ T
NCP1606B @ T
Hysteresis of the dynamic OVP current before the OVP latch is released:
NCP1606A
NCP1606B
Static OVP Threshold Voltage
Undervoltage protection (UVP) threshold voltage
Gate Drive Resistance:
Drive voltage rise time from 10% V
Drive voltage fall time from 10% V
Driver output voltage at V
HARACTERISTICS
R
R
R
R
OH
OH
OL
OL
@ I
@ I
@ I
@ I
J
J
= 25°C
= −25°C to +125°C
CT
SINK
SINK
SOURCE
SOURCE
ZCD
= 0 V)
ZCD
= 100 mA
= 20 mA
rising)
CC
= 100 mA
= 20 mA
falling)
= V
CC(on)
J
CC
CC
= 25°C. For min/max values, T
to 90% V
to 90% V
Rating
− 200 mV and I
http://onsemi.com
CT
CC
CC
= 3.4 V to 100 mV.
with C
with C
5
sink
DRV
DRV
= 10 mA
= 1 nF and V
= 1 nF and V
J
= −25°C to +125°C, V
CC
CC
= 12 V.
= 12 V.
0.25
Min
150
243
2.9
9.0
8.7
CC
75
34
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
= 12 V, FB = 2.4 V, C
100 mV
V
10.4
EAL
Typ
200
290
100
180
270
150
3.2
0.3
90
70
40
30
12
12
30
25
−
−
8
6
6
−
+
Max
12.1
11.8
250
350
170
300
297
100
220
3.3
0.4
0.2
45
18
18
10
10
80
70
−
−
−
−
DRV
=
Unit
mV
mV
mV
mA
mA
mA
ns
ns
ms
ns
ns
ns
ns
V
V
V
W
V