MA4SW424B-1 Tyco Electronics, MA4SW424B-1 Datasheet

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MA4SW424B-1

Manufacturer Part Number
MA4SW424B-1
Description
Monolithic SP4T PIN Diode Switch
Manufacturer
Tyco Electronics
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA4SW424B-1
Manufacturer:
M/A-COM
Quantity:
5 000
www.DataSheet4U.com
Monolithic SP4T PIN Diode Switch
With Integrated Bias Network
Features
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Description
The MA4SW424B-1 device is a SP4T Switch with Integrated Bias
Network utilizing M/A-COM's HMIC
Integrated Circuit) Process, US Patent 5,268,310. This process
allows the incorporation of silicon pedestals that form series and/or
shunt diodes or vias by imbedding them in a low loss, low
dispersion glass. By using small spacing between elements, this
combination of silicon and glass gives HMIC devices exceptional
low loss and high isolation performance with exceptional
repeatability through lower millimeter frequencies.
Four mil square RF bond pads facilitate the use of low inductance
ribbon bonds, while gold backside metalization allows for manual
or automatic chip bonding using 80Au/20Sn, Sn62/Pb36/Ag2
solders or electrically conductive silver epoxy. Each RF Bond Pad
has adjacent wire-bonded tuning pads available to optimize the RF
Match for a particular frequency response.
Applications
The MA4SW424B-1 SP4T Device is Designed for 24 GHz
Automotive Switching Applications. Insertion Loss is Achieved
with + 12 mA @ + 4 V and Isolation is Achieved with 0V D.C.
Bias. The RF Bias Network is Integrated into the HMIC Swich for
ease of use and space consideration.
Absolute Maximum Ratings
@ TA = +25 °C (unless otherwise
specified)
1. Exceeding any of these values may result in permanent
damage
+12mA for Insertion Loss, 0 Volts for Isolation
Operating Temperature
Storage Temperature
RF C.W. Incident Power
@ +20 mA
DC Bias Current
Frequency of Operation: 24 +/- 2 GHz
Fully Integrated Bias Network
Series Diode, Low Current Consumption Design :
The Device is Wire Bond Compensated at all RF Ports
for RF Matching
Rugged, Fully Monolithic, Glass Encapsulated
Construction
Parameter
TM
-65 °C to +125 °C
-65 °C to +150 °C
(Heterolithic Microwave
+ 30 dBm
+40 mA
Value
1
Note:
1. RF and DC Bond Pads are 4 mils (0.10 mm) Square
Outline Drawing
Nominal Die Dimensions
Dim
C
D
G
H
A
B
E
F
I
0.100
0.131
0.061
0.027
0.064
0.091
0.025
0.052
0.019
Min
Inches
0.104
0.135
0.062
0.028
0.065
0.092
0.026
0.052
0.020
Max
2.54
3.33
1.55
0.70
1.63
2.31
0.63
1.31
0.48
Min
Millimeters
V 1.00
Max
2.64
3.43
1.57
0.72
1.65
2.33
0.65
1.33
0.50

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MA4SW424B-1 Summary of contents

Page 1

... Rugged, Fully Monolithic, Glass Encapsulated Construction Description The MA4SW424B-1 device is a SP4T Switch with Integrated Bias Network utilizing M/A-COM's HMIC Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and/or shunt diodes or vias by imbedding them in a low loss, low dispersion glass ...

Page 2

... Spiking Network, where – 200 , C = 390 – 560 pF. Operation of the MA4SW424B-1 Operation of the MA4SW424B-1 Series PIN Diode Switch is achieved by the Application of D.C. Current ( 12mA ) to the Bias Port of the Selected Insertion Loss Port and 0V Bias for the Isolated Ports. The control currents should be supplied by constant current sources. ...

Page 3

... Cleanliness These chips should be handled in a clean environment. Do not attempt to clean die after installation. Electro-Static Sensitivity The MA4SW424B-1 Series PIN Diode Switch is ESD, Class 1 sensitive. The proper ESD handling procedures should be used. Wire Bonding Thermosonic wedge or Ball bonding using 0.003” x 0.00025” ...

Page 4

... M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. MA4SW424B-1 TYPICAL INSERTION LOSS 22 22.5 23 23.5 Frequency (GHz) J1-J2 J1-J3 MA4SW424B-1 TYPICAL INPUT RETURN LOSS 22 22.5 23 23.5 Frequency (GHz) J1-J2 J1-J3 MA4SW424B ...

Page 5

... Tuning Stubs are positioned adjacent to Each RF Pad to Optimize Performance. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. MA4SW424B-1 TYPICAL OUTPUT RETURN LOSS 22 22 ...

Page 6

... Monolithic SP4T PIN Diode Switch with Integrated Bias Network MA4SW424B-1 Schematic B2 DC Bias J2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information Common Port ) ...

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