G4BC40S International Rectifier, G4BC40S Datasheet

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G4BC40S

Manufacturer Part Number
G4BC40S
Description
Search -----> IRG4BC40S
Manufacturer
International Rectifier
Datasheet
www.DataSheet4U.com
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
Features
Features
Features
Features
• Standard: optimized for minimum saturation
• Generation 4 IGBT design provides tighter
• Industry standard TO-220AB package
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
www.irf.com
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
Generation 3
parameter distribution and higher efficiency than
J
STG
CES
GE
ARV
D
D
θJC
θCS
θJA
voltage and low operating frequencies ( < 1kHz)
industry-standard Generation 3 IR IGBTs
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm from case )
2.0 (0.07)
Typ.
0.50
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to + 150
IRG4BC40S
Standard Speed IGBT
TO-220AB
Max.
± 20
600
120
120
160
60
31
15
65
V
@V
CE(on) typ.
Max.
0.77
V
–––
–––
GE
80
CES
PD - 91455B
= 15V, I
= 600V
= 1.32V
C
= 31A
Units
Units
g (oz)
4/17/2000
°C/W
mJ
W
°C
V
V
A
1

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G4BC40S Summary of contents

Page 1

... Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com G n-channel Parameter 300 (0.063 in. (1.6mm from case ) Parameter 2.0 (0.07 91455B IRG4BC40S Standard Speed IGBT 600V CES = 1.32V V CE(on) typ 15V 31A TO-220AB Max. Units ...

Page 2

... IRG4BC40S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage — /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance ...

Page 3

... T = 25° 15V G E 20µs PULSE WIDTH Fig Typical Transfer Characteristics IRG4BC40S T ria 90° 150° 25° 50V C C 5µ ...

Page 4

... IRG4BC40S Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0 0 .05 SIN 0 Fig ...

Page 5

... Fig Typical Gate Charge vs -60 Fig Typical Switching Losses vs. IRG4BC40S = Total rge ( Gate-to-Emitter Voltage = 10 Ω G ...

Page 6

... IRG4BC40S Ω 150° 480V 15V Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current ...

Page 7

... ff t=5µ IRG4BC40S 480V 25° 480µF 960V Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - ...

Page 8

... IRG4BC40S Case Outline and Dimensions — TO-220AB (. (. (. (. 6.47 (.255 ) 6.10 (.240 ) (. (. (. (. (. ...

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