G4BC40S

Manufacturer Part NumberG4BC40S
DescriptionSearch -----> IRG4BC40S
ManufacturerInternational Rectifier
G4BC40S datasheet
 


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INSULATED GATE BIPOLAR TRANSISTOR
Features
Features
Features
Features
Features
• Standard: optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
V
Collector-to-Emitter Breakdown Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
Pulsed Collector Current Q
I
CM
Clamped Inductive Load Current R
I
LM
V
Gate-to-Emitter Voltage
GE
Reverse Voltage Avalanche Energy S
E
ARV
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient, typical socket mount
θJA
Wt
Weight
www.irf.com
G
n-channel
Parameter
300 (0.063 in. (1.6mm from case )
Parameter
2.0 (0.07)
PD - 91455B
IRG4BC40S
Standard Speed IGBT
C
V
= 600V
CES
= 1.32V
V
CE(on) typ.
@V
= 15V, I
= 31A
E
GE
C
TO-220AB
Max.
Units
600
V
60
31
A
120
120
± 20
V
15
mJ
160
W
65
-55 to + 150
°C
10 lbf•in (1.1N•m)
Typ.
Max.
Units
–––
0.77
0.50
–––
°C/W
–––
80
–––
g (oz)
4/17/2000
1

G4BC40S Summary of contents

  • Page 1

    ... Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com G n-channel Parameter 300 (0.063 in. (1.6mm from case ) Parameter 2.0 (0.07 91455B IRG4BC40S Standard Speed IGBT 600V CES = 1.32V V CE(on) typ 15V 31A TO-220AB Max. Units ...

  • Page 2

    ... IRG4BC40S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage — /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance ...

  • Page 3

    ... T = 25° 15V G E 20µs PULSE WIDTH Fig Typical Transfer Characteristics IRG4BC40S T ria 90° 150° 25° 50V C C 5µ ...

  • Page 4

    ... IRG4BC40S Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0 0 .05 SIN 0 Fig ...

  • Page 5

    ... Fig Typical Gate Charge vs -60 Fig Typical Switching Losses vs. IRG4BC40S = Total rge ( Gate-to-Emitter Voltage = 10 Ω G ...

  • Page 6

    ... IRG4BC40S Ω 150° 480V 15V Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current ...

  • Page 7

    ... ff t=5µ IRG4BC40S 480V 25° 480µF 960V Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - ...

  • Page 8

    ... IRG4BC40S Case Outline and Dimensions — TO-220AB (. (. (. (. 6.47 (.255 ) 6.10 (.240 ) (. (. (. (. (. ...