MIL-PRF-19500 STMicroelectronics, MIL-PRF-19500 Datasheet

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MIL-PRF-19500

Manufacturer Part Number
MIL-PRF-19500
Description
SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC
Manufacturer
STMicroelectronics
Datasheet
Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance are provided for die.
UB), and figures 4 and 5 (die).
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 31 November 2000.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
1.3 Maximum ratings.
(1) Derate linearly at 3.08 mW/ C above T
(2) Derate linearly at 4.76 mW/ C above T
1.4 Primary electrical characteristics.
(1) Pulsed (see 4.5.1).
Limits
Min
Max
2N2484UA
2N2484UB
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and
2N2484
Types
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
V
I
C
CE
f = 1 kHz
= 1 mA dc
T
= 5 V dc
250
900
A
h
500 (1)
650 (2)
500 (1)
= +25 C
fe
mW
P
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
T
100 kHz
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
V
V
V dc
60
60
60
CB
CBO
I
E
C
= 5 V dc
5.0
pF
obo
= 0
f
1 MHz
PERFORMANCE SPECIFICATION
V
V dc
EBO
6
6
6
A
A
= +37.5 C
= +63.5 C.
I
C
V
f = 30 MHz
= 500 A dc
CE
|h
V
V dc
= 5 V dc
2.0
7.0
60
60
60
fe
CEO
|2
mA dc
50
50
50
I
C
I
I
C
B
V
= 0.1 mA dc
= 1.0 mA dc
CE(sat)
V dc
0.3
(1)
T
-65 to +200
-65 to +200
-65 to +200
J
and T
C
STG
MIL-PRF-19500/376E
31 August 2000
SUPERSEDING
MIL-PRF-19500/376D
21 August 1998
INCH-POUND
R
C/W
325
210
325
JA
R
C/W
146
160
146
FSC 5961
JC

Related parts for MIL-PRF-19500

MIL-PRF-19500 Summary of contents

Page 1

... SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. 1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and UB), and figures 4 and 5 (die) ...

Page 2

... Diameter is uncontrolled All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ANSI Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-18). MIL-PRF-19500/376E Note Max 4.95 5.33 5.84 6 0.53 7,8 19.05 7,8 0.48 7,8 1 ...

Page 3

... Measurement of these dimensions may be made prior to solder dipping. 6. Lead connection. FIGURE 2. Physical dimensions, surface mount (2N2484UA). MIL-PRF-19500/376E Dimensions Inches Millimeters Min ...

Page 4

... NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Dimensions B2 and B3 are identical Dimension L2 is identical to L1. FIGURE 3. Physical dimensions, surface mount (2N2484UB). MIL-PRF-19500/376E Dimensions Inches Millimeters Min. Max. Min. Max. .046 .056 0.97 1.42 .017 .035 ...

Page 5

... Back metal..........................................A. Gold 2,500Å minimum, 3,000Å nominal 5. Backside .............................................Collector 6. Bonding pad........................................B = 0.003 inches 0.004 inches diameter 7. Passivation .........................................Si FIGURE 4. Physical dimensions, JANHC and JANKC die version. MIL-PRF-19500/376E A- version 0.001 inch 0.0015 inches B. Eutectic Mount – No Gold N (Silicon Nitride) 2kÅ min, 2.2kÅ nom. 3 ...

Page 6

... Base pad: ..................................................0.0025 inches diameter Emitter pad: ...............................................0.003 inches diameter Back metal:................................................Gold, 6500 Top metal: .................................................Aluminum, 19500 Back side: ..................................................Collector Glassivation:..............................................SiO2, 7500 FIGURE 5. Physical dimensions, JANHC and JANKC die version. MIL-PRF-19500/376E B - version 0.0016 inches 1950 Å 2500 Å 1500 Å 6 ...

Page 7

... Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094 ...

Page 8

... Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL-PRF-19500, and herein. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1 ...

Page 9

... Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF- ...

Page 10

... A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4 ...

Page 11

... JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) shall be in accordance with group A, subgroup 2 herein ...

Page 12

... Emitter to base cutoff current 3061 Collector to emitter cutoff 3041 current Forward-current transfer ratio 3076 See footnote at end of table. MIL-PRF-19500/376E TABLE I. Group A inspection. MIL-STD-750 Symbol Conditions devices leads devices Test condition C, 25 cycles devices ...

Page 13

... Small-signal open-circuit 3216 output admittance Small-signal open- circuit 3211 reverse-voltage transfer ratio Small-signal short- circuit input 3201 impedance See footnote at end of table. MIL-PRF-19500/376E TABLE I. Group A inspection - Continued. MIL-STD-750 Conditions dc dc 100 A dc ...

Page 14

... Decap internal visual (design 2075 verification) 1/ For sampling plan see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. ...

Page 15

... Intermittent life 1037 Electrical measurements Subgroup 3 Not applicable Subgroup 4 Not applicable Subgroup 5 Not applicable MIL-PRF-19500/376E MIL-STD-750 Conditions Test condition C, 500 cycles See group A, subgroup 2 and table III herein. Intermittent operation life 6,000 cycles. See group A, subgroup 2 and table III herein. ...

Page 16

... The delta measurements for 4.4.2.2 herein (group B, JAN, JANTX, and JANTXV) are as follows: Steps 2 and 3 of table III shall be performed after each step in 4.4.2.2 herein. 3/ The delta measurements for group C, table VII of MIL-PRF-19500 are as follows: Subgroup 6, see table III herein, steps 1 and 3 for JANS, step 1 for JAN, JANTX, and JANTXV. 4/ Devices which exceed the group A limits for this test shall not be accepted ...

Page 17

... NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. ...

Page 18

... Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Review activities: Army - AR, MI, SM Navy - AS, CG, MC, SH Air Force - 13, 19 MIL-PRF-19500/376E 18 Preparing activity: DLA - CC (Project 5961-2309) ...

Page 19

... ADDRESS (Include Zip Code) 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center, Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) 1. DOCUMENT NUMBER MIL-PRF-19500/376E b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL b. TELEPHONE Commercial DSN 614-692-0510 ...

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