MC74VHC1G01 ON Semiconductor, MC74VHC1G01 Datasheet - Page 5

• Manufacturer Part Number: MC74VHC1G01
• Description: 2-Input NAND Gate with Open Drain Output
• Manufacturer: ON Semiconductor

1. Metric Dimensions Govern–English are in parentheses for reference only.
2. A 0 , B 0 , and K 0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min to
EMBOSSED CARRIER DIMENSIONS (See Notes 1 and 2)
Tape
Size
8 mm
0.50 mm max. The component cannot rotate more than 10 within the determined cavity
10
4.35 mm
(0.171”)
BENDING RADIUS
Max
B 1
MAXIMUM COMPONENT ROTATION
1.5 +0.1/
–0.0 mm
INCLUDING DRAFT AND RADII
+0.004/
FOR MACHINE REFERENCE
(0.059
–0.0”)
CONCENTRIC AROUND B 0
D
B 1
TYPICAL
COMPONENT CAVITY
CENTER LINE
TYPICAL
COMPONENT
CENTER LINE
(0.039”)
1.0 mm
ONLY
R MIN.
TAPE AND COMPONENTS
SHALL PASS AROUND RADIUS “R”
WITHOUT DAMAGE
D 1
Min
NOTE 2
K
t
SEE
K 0
(0.069
0.1 mm
0.004”)
1.75
E
COVER
TAPE
TOP
Figure 5. Carrier Tape Specifications
0.5 mm
0.002”)
(1.38
3.5
F
D
MC74VHC1G01
http://onsemi.com
USER DIRECTION OF FEED
(0.094”)
2.4 mm
ALLOWABLE CAMBER TO BE 1 mm/100 mm NONACCUMULATIVE OVER 250
EMBOSSMENT
K
+
5
A 0
B 0
P
0.10 mm
(0.157
0.004”)
100 mm
(3.937”)
4.0
P
SEE NOTE 2
P 2
EMBOSSED
CARRIER
P 0
+
1 mm MAX
(0.156
0.1 mm
0.004”)
P 0
4.0
CAMBER (TOP VIEW)
CENTER LINES
OF CAVITY
10 PITCHES
CUMULATIVE
TOLERANCE ON
TAPE
( 0.008”)
0.2 mm
+
(0.079
0.1 mm
0.002”)
P 2
2.0
(0.039”) MAX
*TOP COVER
TAPE THICKNESS (t 1 )
0.10 mm
(0.004”) MAX.
1 mm
E
F
W
25 mm
(0.98”)
R
D 1
FOR COMPONENTS
2.0 mm 1.2 mm
AND LARGER
EMBOSSMENT
TAPE
250 mm
(9.843”)
–0.0002”)
+0.0038/
0.05 mm
(0.01
0.3
T
mm
(0.315
0.3 mm
0.012”)
8.0
W