BCM857BS Philips Semiconductors, BCM857BS Datasheet - Page 4

• Manufacturer Part Number: BCM857BS
• Description: PNP matched double transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
9397 750 14723
Product data sheet
Table 7:
T
[1]
Symbol Parameter
Per transistor
I
I
h
V
V
V
C
C
f
Per device
CBO
EBO
T
amb
FE
h
V
CEsat
BEsat
BE
c
e
FE
BE
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
collector capacitance V
emitter capacitance
transition frequency
DC current gain
matching
base-emitter voltage
matching
Characteristics
p
300 s;
Rev. 02 — 11 April 2005
0.02.
Conditions
V
V
T
V
V
V
I
I
I
I
V
V
f = 1 MHz
V
f = 1 MHz
V
f = 100 MHz
V
V
C
C
C
C
j
CB
CB
EB
CE
CE
CE
CE
CB
EB
CE
CE
CE
= 150 C
= 10 mA; I
= 10 mA; I
= 100 mA; I
= 100 mA; I
= 0.5 V; I
= 5 V; I
= 10 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
C
C
C
C
C
C
C
C
PNP matched double transistor; h
B
B
E
E
E
C
= 0 A
= 10 A
= 2 mA
= 2 mA
= 10 mA
= 10 mA;
= 2 mA
= 2 mA
B
B
= i
= 0.5 mA
= 0.5 mA
= 0 A
= 0 A;
= i
= 5 mA
= 5 mA
e
c
= 0 A;
= 0 A;
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
200
-
-
-
-
-600
-
-
-
100
-
-
BCM857BS
Typ
-
-
-
250
290
-
-
10
250
-
-
50
200
760
920
650
Max
-
450
-
-
2.2
-
-
10
2
15
5
100
200
400
700
760
FE
Unit
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
mV
A
10
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