JANTXV2N6758 International Rectifier, JANTXV2N6758 Datasheet

no-image

JANTXV2N6758

Manufacturer Part Number
JANTXV2N6758
Description
POWER MOSFET N-CHANNEL(BVdss=200V/ Rds(on)=0.40ohm/ Id=9A)
Manufacturer
International Rectifier
Datasheet
HEXFET
Absolute Maximum Ratings
200 Volt, 0.40 HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
I D @ V GS = 10V, T C = 100°C Continuous Drain Current
I D @ V GS = 10V, T C = 25°C
Previous Datasheet
P D @ T C = 25°C
T STG
dv/dt
V GS
E AS
E AR
I DM
I AR
T J
®
POWER MOSFET
Peak Diode Recovery dv/dt
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Parameter
To Order
Index
[REF:MIL-PRF-19500/542]
Product Summary
Features:
JANTXV2N6758
JANTX2N6758
Part Number
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Provisional Data Sheet No. PD-9.334E
[GENERIC:IRF230]
JANTX2N6758, JANTXV2N6758
300 (0.063 in. (1.6mm) from
JANTXV2N6758
case for 10.5 seconds)
Next Data Sheet
JANTX2N6758
BV
200V
11.5 (typical)
-55 to 150
DSS
0.60
±20
7.5
5.0
36
75
54
9
6
9
N-CHANNEL
R
0.40
DS(on)
Units
W/K
V/ns
o
mJ
mJ
W
C
V
A
g
A
9A
I
D

Related parts for JANTXV2N6758

JANTXV2N6758 Summary of contents

Page 1

... Weight Index Provisional Data Sheet No. PD-9.334E [REF:MIL-PRF-19500/542] [GENERIC:IRF230] Product Summary Part Number JANTX2N6758 JANTXV2N6758 Features: Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Parameter JANTX2N6758, JANTXV2N6758 To Order Next Data Sheet JANTX2N6758 JANTXV2N6758 N-CHANNEL DSS DS(on) 200V 9A 0.40 Units 9 ...

Page 2

... Previous Datasheet JANTX2N6758, JANTXV2N6758 Device Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward ...

Page 3

... Previous Datasheet JANTX2N6758, JANTXV2N6758 Device Fig. 1 — Typical Output Characteristics T = 25°C C Fig. 3 — Typical Transfer Characteristics Fig. 5 — Typical Capacitance Vs. Drain-to-Source Voltage Index Next Data Sheet Fig. 2 — Typical Output Characteristics T = 150°C C Fig. 4 — Normalized On-Resistance Vs.Temperature Fig. 6 — Typical Gate Charge Vs. Gate-to-Source ...

Page 4

... Previous Datasheet JANTX2N6758, JANTXV2N6758 Device Fig. 7 — Typical Source-to-Drain Diode Forward Voltage Fig. 9 — Maximum Drain Current Vs. Case Temperature Fig. 10a — Switching Time Test Circuit Index Next Data Sheet Fig. 8 — Maximum Safe Operating Area Fig. 10b — Switching Time Waveforms ...

Page 5

... Previous Datasheet JANTX2N6758, JANTXV2N6758 Device Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration Fig. 12a — Unclamped Inductive Test Circuit Fig. 12c — Max. Avalanche Energy vs. Current Index Next Data Sheet Fig. 12b — Unclamped Inductive Waveforms Fig. 13a — Gate Charge Test Circuit ...

Page 6

... Previous Datasheet JANTX2N6758, JANTXV2N6758 Device Fig. 13b — Basic Gate Charge Waveform Case Outline and Dimensions — TO-204AA (Modified TO-3) All dimensions are shown millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR FAR EAST: K& ...

Related keywords