JANTXV2N6770 International Rectifier, JANTXV2N6770 Datasheet

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JANTXV2N6770

Manufacturer Part Number
JANTXV2N6770
Description
POWER MOSFET N-CHANNEL(BVdss=500v/ Rds(on)=0.40ohm/ Id=12A)
Manufacturer
International Rectifier
Datasheet

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JANTXV2N6770
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REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 0V, T C = 100°C
I D @ V GS =0V, T C = 25°C
www.irf.com
Part Number
IRF450
P D @ T C = 25°C
T STG
dv/dt
I DM
E AR
E AS
V GS
I AR
T J
BVDSS
500V
R
0.400
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
I
D
A
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
11.5(typical)
-55 to 150
500V, N-CHANNEL
7.75
150
±20
1.2
8.0
3.5
1 2
4 8
1 2
-
JANTXV2N6770
TO-3
JANTX2N6770
IRF450
PD - 90330F
Units
W/°C
V/ns
o
01/22/01
mJ
mJ
W
A
A
V
g
C
1

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JANTXV2N6770 Summary of contents

Page 1

... For footnotes refer to the last page www.irf.com Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling 300 (0.063 in. (1.6mm) from case for 10s 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL TO-3 Units 7. 150 W 1.2 W/°C ± ...

Page 2

IRF450 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain ...

Page 3

Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF450 3 ...

Page 4

IRF450 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com 13 a& a& b ...

Page 5

Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com D.U. 10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% ...

Page 6

IRF450 10V 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G 10V Q ...

Page 7

Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature 50V, starting 25°C, Peak 12A, Case Outline and Dimensions —TO-204AA (Modified TO-3) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, ...

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