JANTXV2N6800 International Rectifier, JANTXV2N6800 Datasheet

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JANTXV2N6800

Manufacturer Part Number
JANTXV2N6800
Description
POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A)
Manufacturer
International Rectifier
Datasheet
HEXFET
Absolute Maximum Ratings
400 Volt, 1.0 HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
I D @ V GS = 10V, T C = 100°C Continuous Drain Current
I D @ V GS = 10V, T C = 25°C
Previous Datasheet
P D @ T C = 25°C
T STG
dv/dt
V GS
I DM
T J
®
POWER MOSFET
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Parameter
To Order
Index
[REF:MIL-PRF-19500/557]
Product Summary
Features:
JANTXV2N6800
JANTX2N6800
Part Number
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Provisional Data Sheet No. PD-9.432B
[GENERIC:IRFF330]
JANTX2N6800, JANTXV2N6800
300 (0.063 in. (1.6mm) from
JANTXV2N6800
case for 10.5 seconds)
Next Data Sheet
JANTX2N6800
BV
400V
0.98 (typical)
-55 to 150
DSS
12.0
0.20
±20
3.0
2.0
4.0
25
N-CHANNEL
R
1.0
DS(on)
Units
W/K
V/ns
o
3.0A
C
W
V
g
A
I
D

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JANTXV2N6800 Summary of contents

Page 1

... Weight Index Provisional Data Sheet No. PD-9.432B [REF:MIL-PRF-19500/557] [GENERIC:IRFF330] Product Summary Part Number JANTX2N6800 JANTXV2N6800 Features: Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Parameter JANTX2N6800, JANTXV2N6800 To Order Next Data Sheet JANTX2N6800 JANTXV2N6800 N-CHANNEL DSS DS(on) 3.0A 400V 1.0 Units 3 ...

Page 2

... Previous Datasheet JANTX2N6800, JANTXV2N6800 Device Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward ...

Page 3

... Previous Datasheet JANTX2N6800, JANTXV2N6800 Device Fig. 1 — Typical Output Characteristics T = 25°C C Fig. 3 — Typical Transfer Characteristics Fig. 5 — Typical Capacitance Vs. Drain-to-Source Voltage Index Next Data Sheet Fig. 2 — Typical Output Characteristics T = 150°C C Fig. 4 — Normalized On-Resistance Vs.Temperature Fig. 6 — Typical Gate Charge Vs. Gate-to-Source ...

Page 4

... Previous Datasheet JANTX2N6800, JANTXV2N6800 Device Fig. 7 — Typical Source-to-Drain Diode Forward Voltage Fig. 9 — Maximum Drain Current Vs. Case Temperature Fig. 10a — Switching Time Test Circuit Index Next Data Sheet Fig. 8 — Maximum Safe Operating Area Fig. 10b — Switching Time Waveforms ...

Page 5

... Previous Datasheet JANTX2N6800, JANTXV2N6800 Device Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration Fig. 12a — Unclamped Inductive Test Circuit Fig. 13a — Gate Charge Test Circuit Index Next Data Sheet Fig. 12b — Unclamped Inductive Waveforms Fig. 13b — Basic Gate Charge Waveform ...

Page 6

... Previous Datasheet JANTX2N6800, JANTXV2N6800 Device Repetitive Rating; Pulse width limited by maximum junction temperature. (see figure 11 50V, Starting 25° [0 [BV DSS /(BV DSS - Peak 3.0A 10V Case Outline and Dimensions — TO-205AF (Modified TO-39) All dimensions are shown millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St ...

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