LM3S1911-IRN20-A0T Luminary Micro, Inc., LM3S1911-IRN20-A0T Datasheet - Page 134

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LM3S1911-IRN20-A0T

Manufacturer Part Number
LM3S1911-IRN20-A0T
Description
Microcontroller
Manufacturer
Luminary Micro, Inc.
Datasheet
Internal Memory
Flash Memory Address (FMA)
Base 0x400F.D000
Offset 0x000
Type R/W, reset 0x0000.0000
134
Reset
Reset
Type
Type
Bit/Field
31:18
17:0
R/W
RO
31
15
0
0
Register 1: Flash Memory Address (FMA), offset 0x000
During a write operation, this register contains a 4-byte-aligned address and specifies where the
data is written. During erase operations, this register contains a 1 KB-aligned address and specifies
which page is erased. Note that the alignment requirements must be met by software or the results
of the operation are unpredictable.
R/W
RO
30
14
0
0
reserved
OFFSET
Name
R/W
RO
29
13
0
0
R/W
RO
28
12
0
0
R/W
RO
Type
27
11
R/W
0
0
RO
R/W
RO
26
10
0
0
Reset
0x0
0x0
R/W
RO
25
0
9
0
reserved
Preliminary
Description
Software should not rely on the value of a reserved bit. To provide
compatibility with future products, the value of a reserved bit should be
preserved across a read-modify-write operation.
Address Offset
Address offset in flash where operation is performed, except for
nonvolatile registers (see “Nonvolatile Register Programming” on page
132 for details on values for this field).
R/W
RO
24
0
8
0
OFFSET
R/W
RO
23
0
7
0
R/W
RO
22
0
6
0
R/W
RO
21
0
5
0
R/W
RO
20
0
4
0
R/W
RO
19
0
3
0
R/W
RO
18
0
2
0
October 09, 2007
R/W
R/W
17
0
1
0
OFFSET
R/W
R/W
16
0
0
0

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