DS1135L Dallas Semiconductor, DS1135L Datasheet - Page 5

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DS1135L

Manufacturer Part Number
DS1135L
Description
3V 3-in-1 High-Speed Silicon Delay Line
Manufacturer
Dallas Semiconductor
Datasheet

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TEST CONDITIONS
Ambient Temperature: 25°C ± 3°C
Supply Voltage (V
Input Pulse:
Source Impedance: 50W Max.
Rise and Fall Time: 3.0ns Max. — Measured between 0.6V and 2.4V.
Pulse Width: 500ns
Pulse Period: 1ms
Output Load Capacitance: 15pF
Output:
Note: The above conditions are for test only and do not restrict the devices under other data sheet
conditions.
TIMING DIAGRAM
NOTES:
1. All voltages are referenced to ground.
2. Power-up time is the time from the application of power to the time stable delays are being produced
at the output.
OUT
IN
High: 3.0V ± 0.1V
Low: 0.0V ± 0.1V
Each output is loaded with the equivalent of one 74F04 input gate.
Data is measured at the 1.5V level on the rising and falling edges.
t
80%
20%
RISE
CC
): 3.3V ± 0.1V
1.5V
t
PLH
t
WI
1.5V
1.5V
t
OR
t
1.5V
PHL
t
FALL
PERIOD
5 of 6
t
OF
t
WI
1.5V

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