DS1225Y Dallas, DS1225Y Datasheet

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DS1225Y

Manufacturer Part Number
DS1225Y
Description
64k Nonvolatile SRAM
Manufacturer
Dallas
Datasheet

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FEATURES
DESCRIPTION
The DS1225Y 64K Nonvolatile SRAM is a 65,536–bit,
fully static, nonvolatile RAM organized as 8192 words
by 8 bits. Each NV SRAM has a self–contained lithium
energy source and control circuitry which constantly
monitors V
such a condition occurs, the lithium energy source is
automatically switched on and write protection is uncon-
ditionally enabled to prevent data corruption. The NV
SRAM can be used in place of existing 8K x 8 SRAMs
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Directly replaces 8K x 8 volatile static RAM or EE-
PROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28–pin DIP package
Read and write access times as fast as 150 ns
Full 10% operating range
Optional industrial temperature range of –40 C to
+85 C, designated IND
CC
for an out–of–tolerance condition. When
PIN ASSIGNMENT
PIN DESCRIPTION
A0–A12
DQ0–DQ7
CE
WE
OE
V
GND
NC
directly conforming to the popular bytewide 28–pin DIP
standard. The DS1225Y also matches the pinout of the
2764 EPROM or the 2864 EEPROM, allowing direct
substitution while enhancing performance. There is no
limit on the number of write cycles that can be executed
and no additional support circuitry is required for micro-
processor interfacing.
CC
GND
DQ0
DQ1
DQ2
A12
NC
A7
A6
A5
A4
A3
A2
A1
A0
28–PIN ENCAPSULATED PACKAGE
64K Nonvolatile SRAM
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Power (+5V)
– Ground
– No Connect
1
2
3
4
5
6
7
8
9
10
11
12
13
14
720 MIL EXTENDED
28
27
26
25
24
23
21
20
19
18
17
16
15
22
DS1225Y
VCC
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
021998 1/8
DS1225Y

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DS1225Y Summary of contents

Page 1

... Ground NC – No Connect directly conforming to the popular bytewide 28–pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for micro- processor interfacing ...

Page 2

... CO OE cess. WRITE MODE The DS1225Y executes a write cycle whenever the WE and CE signals are active (low) after address inputs are stable. The latter occurring falling edge will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge WE. All address inputs must be kept valid throughout the write cycle ...

Page 3

... C to +70 C; – +85 C for IND parts 260 C for 10 seconds (t : See Note 10) A MIN TYP MAX UNITS 4.5 5.0 5 0.0 +0 See Note 10 MIN TYP MAX UNITS –1.0 +1.0 A –1.0 +1.0 A –1 4.25 V DS1225Y NOTES 10%) NOTES 10 021998 3/8 ...

Page 4

... Data Hold Time t 0 DH1 t 10 DH2 CAPACITANCE PARAMETER SYMBOL Input Capacitance C IN Input/Output Capacitance C I/O 021998 4 See Note 10; V =5. DS1225Y-170 DS1225Y-200 MAX MIN MAX MIN MAX UNITS NOTES UNITS NOTES 170 200 ns 150 170 200 100 ns 150 170 200 ns ...

Page 5

... IMPEDANCE DH1 DATA IN STABLE WR2 COE ODW DH2 DATA IN STABLE DS1225Y IH IL 021998 5/8 ...

Page 6

... DS1225Y POWER–DOWN/POWER–UP CONDITION 3. LEAKAGE CURRENT I SUPPLIED FROM L LITHIUM CELL DATA RETENTION TIME SEE NOTE 11 POWER–DOWN/POWER–UP TIMING PARAMETER before Power–Down IH V Slew from Slew from after Power–Up ...

Page 7

... low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high impedance state during this period. 9. Each DS1225Y is marked with a 4–digit date code AABB. AA designates the year of manufacture. BB designates the week of manufacture. The expected t is defined as starting at the date of manufacture ...

Page 8

... DS1225Y DS1225Y NONVOLATILE SRAM, 28–PIN 720 MIL EXTENDED MODULE 021998 8/8 PKG 28–PIN DIM MIN MAX A IN. 1.520 1.540 MM 38.61 39.12 B IN. 0.695 0.720 MM 17.65 18.29 C IN. 0.395 0.415 MM 10.03 10.54 D IN. 0.100 0.130 MM 2.54 3.30 E IN. 0.017 0.030 MM 0.43 0.76 F IN. 0.120 0.160 MM 3.05 4. IN. 0.090 0.110 MM 2 ...

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